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18 Jan 2010

Volume 96, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 033101 (2010); http://dx.doi.org/10.1063/1.3291849 (3 pages)

Ferruccio Pisanello, Luigi Martiradonna, Godefroy Leménager, Piernicola Spinicelli, Angela Fiore, Liberato Manna, Jean-Pierre Hermier, Roberto Cingolani, Elisabeth Giacobino, Massimo De Vittorio, and Alberto Bramati
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Silicon-on-diamond material by pulsed laser technique

S. Lagomarsino, G. Parrini, S. Sciortino, M. Santoro, M. Citroni, M. Vannoni, A. Fossati, F. Gorelli, G. Molesini, and A. Scorzoni

Appl. Phys. Lett. 96, 031901 (2010); http://dx.doi.org/10.1063/1.3291043 (3 pages) | Cited 3 times

Online Publication Date: 19 January 2010

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We present a method to bond directly silicon and diamond plates to obtain a single silicon-on-diamond material, with a carbon–silicon interface of unprecedented quality. The bonding is performed at room temperature, via picosecond 355 nm pulsed laser irradiation of the silicon-diamond interface, through the transparent diamond. The obtained material exhibits excellent mechanical strength and uniformity of the bonding, as shown by mechanical tests and analysis of the cross section based on scanning electron microscopy. The bonding is ascribed to silicon carbide nanolayers at the interface which, along with amorphous silicon nanolayers, have been quantitatively detected and evaluated by means of optical spectroscopy measurements. A physical insight into the processes occurring at the diamond-silicon interface during the pulsed irradiation and cooling has been provided by a finite element numerical model. A rationale is then given for the observed SiC bond in terms of silicon and diamond melting and inter-diffusion. A crucial outcome of the model consists in predicting the effect of the different laser beam parameters on the bonding process, thereby allowing us to obtain a well tailored procedure. An excellent quality silicon-on-diamond is now available for implementing highly integrated electronic devices for diverse application areas, ranging from pixel detectors to biosensors and prostheses for the human body.
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81.20.Vj Joining; welding
68.35.Fx Diffusion; interface formation
64.70.dj Melting of specific substances
42.62.-b Laser applications
68.35.Ct Interface structure and roughness
61.46.-w Structure of nanoscale materials

Ultraviolet light emission and excitonic fine structures in ultrathin single-crystalline indium oxide nanowires

Z. P. Wei, D. L. Guo, B. Liu, R. Chen, L. M. Wong, W. F. Yang, S. J. Wang, H. D. Sun, and T. Wu

Appl. Phys. Lett. 96, 031902 (2010); http://dx.doi.org/10.1063/1.3284654 (3 pages) | Cited 10 times

Online Publication Date: 19 January 2010

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We report the ultraviolet light emission from ultrathin indium oxide (In2O3) nanowires fabricated by the vapor-liquid-solid method. The high crystalline quality of the samples is confirmed by using x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Strong ultraviolet light emission is consistently observed in the temperature dependent photoluminescence measurements carried out between 10 and 300 K. Emissions related to free excitons and bound exciton complexes, donor-acceptor pair transition and its relevant longitudinal optical phonon replicas are identified and their temperature-dependent evolution is discussed in details.
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71.35.-y Excitons and related phenomena
81.07.Gf Nanowires
81.16.-c Methods of micro- and nanofabrication and processing
78.40.Fy Semiconductors
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
78.67.Uh Nanowires

Formation, structure, and electric property of CaB4 single crystal synthesized under high pressure

Zhongyuan Liu, Xianyue Han, Dongli Yu, Yaxin Sun, Bo Xu, Xiang-Feng Zhou, Julong He, Hui-Tian Wang, and Yongjun Tian

Appl. Phys. Lett. 96, 031903 (2010); http://dx.doi.org/10.1063/1.3293451 (3 pages) | Cited 5 times

Online Publication Date: 19 January 2010

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Via the combination of theoretical and experimental investigations, we have synthesized the single crystal of pure calcium tetraboride (CaB4) under the conditions of high pressure and high temperature. The Temperature (T)-Pressure (P) phase diagram of Ca–B binary system has been obtained. The recovered CaB4 after decompression of high pressure is characterized to have a ThB4-type tetragonal structure. Both the calculated band structure and the measured temperature-dependent resistivity are indicative of the intrinsic metallic property of CaB4, contrary to the hypothetical semiconducting behavior.
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61.66.Fn Inorganic compounds
71.20.Ps Other inorganic compounds
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.30.Dz Phase diagrams of other materials
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
71.15.-m Methods of electronic structure calculations
62.50.-p High-pressure effects in solids and liquids

Polariton effects in the dielectric function of ZnO excitons obtained by ellipsometry

Munise Cobet, Christoph Cobet, Markus R. Wagner, Norbert Esser, Christian Thomsen, and Axel Hoffmann

Appl. Phys. Lett. 96, 031904 (2010); http://dx.doi.org/10.1063/1.3284656 (3 pages) | Cited 7 times

Online Publication Date: 19 January 2010

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The complex dielectric tensor of ZnO in the regime of the excitonic transitions is determined with ellipsometry and analyzed concerning the quantization of the electromagnetic field in terms of coupled polariton-eigenmodes. Negative sections in the real part indicate the significant formation of polaritons for the dipole-allowed excitons of the three upper valence-bands Γ7,Γ9,Γ7. The transverse-longitudinal splittings which separate the upper polariton branch from the lower branch, corresponding to the k-vector of the used light, are deduced precisely for each subband. Mainly for E∥c, additional absorption peaks are observed at the longitudinal B-exciton and closely above. One is considered to be a mixed-mode and the other is seen as a consequence of interference effects in an exciton free surface layer which is also visible in reflectance anisotropy spectroscopy.
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71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
73.20.At Surface states, band structure, electron density of states
71.35.-y Excitons and related phenomena
07.60.Fs Polarimeters and ellipsometers

Enhancement of plastic deformability in Fe–Ni–Nb–B bulk glassy alloys by controlling the Ni-to-Fe concentration ratio

J. M. Park, G. Wang, R. Li, N. Mattern, J. Eckert, and D. H. Kim

Appl. Phys. Lett. 96, 031905 (2010); http://dx.doi.org/10.1063/1.3291668 (3 pages) | Cited 13 times

Online Publication Date: 19 January 2010

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The influence of partial replacement of Fe by Ni in (Fe1−xNix)71Nb6B23 (0 ≤ x ≤ 0.5) bulk glassy alloys on the enhancement of the plasticity has been investigated. The increase of the Ni-to-Fe concentration ratio effectively improves the compressive plasticity. The (Fe0.5Ni0.5)71Nb6B23 alloy exhibits an enhanced plastic strain of ∼ 4.2%, together with high strength and distinct strain hardeninglike characteristics, when compared with the Ni-free Fe71Nb6B23 glass. The improved mechanical properties are ascribed to the control of the intrinsic elastic properties, followed by favorably tuning the interatomic interaction.
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81.40.Lm Deformation, plasticity, and creep
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.fq Plasticity and superplasticity
62.20.D- Elasticity

Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

T. Li, A. M. Fischer, Q. Y. Wei, F. A. Ponce, T. Detchprohm, and C. Wetzel

Appl. Phys. Lett. 96, 031906 (2010); http://dx.doi.org/10.1063/1.3293298 (3 pages) | Cited 10 times

Online Publication Date: 20 January 2010

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InGaN quantum wells, with luminescence in the yellow region of the visible spectrum, have been studied using conventional and time-resolved cathodoluminescence. We observe the absence of strong localization effects and a relatively high internal quantum efficiency of ∼ 12%, which are unexpected for InGaN in this-long wavelength emission range. We have also observed a steady decrease of the peak emission energy, and a continuous increase in the radiative recombination lifetime with temperature up to 100 K. These two features are manifestations of recombination due to nonlocalized excitons. Nonradiative recombination centers, with activation energy of ∼ 6 meV, appear to constitute the main mechanism limiting the internal quantum efficiency of these films.
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78.67.De Quantum wells
71.35.-y Excitons and related phenomena
78.60.Hk Cathodoluminescence, ionoluminescence
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.63.Hs Quantum wells
78.40.Fy Semiconductors

H-induced subcritical crack propagation and interaction phenomena in (001) Si using He-cracks templates

S. Reboh, J. F. Barbot, M. F. Beaufort, and P. F. P. Fichtner

Appl. Phys. Lett. 96, 031907 (2010); http://dx.doi.org/10.1063/1.3290249 (3 pages) | Cited 5 times

Online Publication Date: 21 January 2010

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H and He ion implantations allow the formation of nanocracks within controlled subsurface depths in semiconducting materials. Upon annealing, crack propagation and coalescence provides a way of cutting monocrystalline thin films. Here, the mechanisms of coalescence by crack-tip interactions are depicted in (001) Si wafers. Starting from overpressurized He-cracks, subcritical propagation was activated by diffusional H. Nanocrack interaction can occur by elastic forces, causing tip folding, or by plastic deformation forming extended defects. These observations are discussed and modeled using elasticity and fracture mechanics. The model suggests that kinetic effects in the cutting process depend on the crack interplanar separations.
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62.20.mt Cracks
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
66.30.J- Diffusion of impurities
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.de Elastic moduli
61.72.uf Ge and Si
81.40.Lm Deformation, plasticity, and creep

Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

I. W. Feng, J. Li, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. Zavada

Appl. Phys. Lett. 96, 031908 (2010); http://dx.doi.org/10.1063/1.3295705 (3 pages) | Cited 4 times

Online Publication Date: 21 January 2010

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Much research has been devoted to the incorporation of erbium (Er) into semiconductors aimed at achieving photonic integrated circuits with multiple functionalities. GaN appears to be an excellent host material for Er ions due to its structural and thermal stability. Er-doped GaN (GaN:Er) epilayers were grown on different templates, GaN/Al2O3, AlN/Al2O3, GaN/Si (111), and c-GaN bulk. The effects of stress on 1.54 μm emission intensity, caused by lattice mismatch between the GaN:Er epilayer and the substrate, were probed. The emission intensity at 1.54 μm increased with greater tensile stress in the c-direction of the GaN:Er epilayers. These results indicate that the characteristics of photonic devices based on GaN:Er can be optimized through strain engineering.
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78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors

Sol-gel deposition and piezoelectric properties of {110}-oriented Pb(Zr0.52Ti0.48)O3 thin films

D. Ambika, Viswanathan Kumar, Hideyuki Imai, and Isaku Kanno

Appl. Phys. Lett. 96, 031909 (2010); http://dx.doi.org/10.1063/1.3293446 (3 pages) | Cited 4 times

Online Publication Date: 22 January 2010

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Pb(ZrxTi1−x)O3 [PZT] thin films of thickness 2.0 μm were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a sol-gel spin-coating technique. PZT films on substrates with a strontium titanate bottom layer are preferentially {110}-oriented with a columnar structure. The PZT films exhibit good dielectric properties with a dielectric permittivity, εr = 1545 and dielectric loss, tan δ = 0.04. Excellent piezoelectric characteristics are also exhibited by the {110}-oriented films with an average effective transverse piezocoefficient, e31∗ of −8.4 C/m2. The influence of film texture and composition on the transverse piezocoefficient have also been studied.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.jm Texture
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.65.-j Piezoelectricity and electromechanical effects
77.84.Cg PZT ceramics and other titanates
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
77.55.hj PZT

SrxBa1−xNb2O6−δ Ferroelectric-thermoelectrics: Crystal anisotropy, conduction mechanism, and power factor

Soonil Lee, Rudeger H. T. Wilke, Susan Trolier-McKinstry, Shujun Zhang, and Clive A. Randall

Appl. Phys. Lett. 96, 031910 (2010); http://dx.doi.org/10.1063/1.3291563 (3 pages) | Cited 5 times

Online Publication Date: 22 January 2010

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Nonstoichiometric tungsten bronze-structured ferroelectric SrxBa1−xNb2O6−δ (SBN) single crystals were found to be a promising n-type thermoelectric oxide. Thermopower anomalies were observed at the phase transition temperatures, depending on the degree of reduction as well as crystal anisotropy. Above 500 K, heavily reduced SBN crystals show high thermoelectric power factors ( ∼ 20 μW/cm K2 at 516 K) with both thermopower and electrical conductivity higher parallel to the c-axis. It is noted that the power factor increases with temperature due to the semiconducting behavior with high carrier concentration. The carrier transport mechanism also varies with the degree of reduction and temperature.
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72.20.Pa Thermoelectric and thermomagnetic effects
72.20.-i Conductivity phenomena in semiconductors and insulators
75.30.Gw Magnetic anisotropy
77.80.-e Ferroelectricity and antiferroelectricity

Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films

Jun Luo, Zhijun Qiu, Chaolin Zha, Zhen Zhang, Dongping Wu, Jun Lu, Johan Åkerman, Mikael Östling, Lars Hultman, and Shi-Li Zhang

Appl. Phys. Lett. 96, 031911 (2010); http://dx.doi.org/10.1063/1.3291679 (3 pages) | Cited 9 times

Online Publication Date: 22 January 2010

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The formation of ultrathin silicide films of Ni1−xPtx at 450–850 °C is reported. Without Pt (x = 0) and for tNi<4 nm, epitaxially aligned NiSi2−y films readily grow and exhibit extraordinary morphological stability up to 800 °C. For tNi ≥ 4 nm, polycrystalline NiSi films form and agglomerate at lower temperatures for thinner films. Without Ni (x = 1) and for tPt = 1–20 nm, the annealing behavior of the resulting PtSi films follows that for the NiSi films. The results for Ni1−xPtx of other compositions support the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability.
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65.40.gp Surface energy
61.46.-w Structure of nanoscale materials
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.55.J- Morphology of films
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