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Applied Physics Letters / Volume 96 / Issue 4 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 96, 043309 (2010); http://dx.doi.org/10.1063/1.3299265 (3 pages)

Electrical characteristics of an organic bistable device using an Al/Alq3/nanostructured MoO3/Alq3/p+-Si structure

Tzu-Yueh Chang1,2, You-Wei Cheng2, and Po-Tsung Lee1,2

1Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan
2Department of Photonics and Display Institute, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan

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(Received 18 November 2009; accepted 4 January 2010; published online 29 January 2010)

The electrical properties of a device with an Al/Alq3/nanostructured MoO3/Alq3/p+-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO3 nanoclusterlike layer interposed between the Alq3 thin films. When the device was switched to high conductance, a space-charge field dominated carrier transportation of the device. The space-charge field was resulted from charges trapped in the MoO3 nanoclusterlike layer. Both retention measurement and write-read-erase-read cycles of the device are also provided.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electrical conductivity, molybdenum compounds, nanostructured materials, organic semiconductors, semiconductor storage, semiconductor thin films, space charge

PACS

  • 85.30.-z

    Semiconductor devices

  • 84.30.Sk

    Pulse and digital circuits

  • 81.05.Fb

    Organic semiconductors

  • 73.22.-f

    Electronic structure of nanoscale materials and related systems

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3299265

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
(a) I-V characteristics of an OBD with an Al/Alq3/nanostructured MoO3/Alq3/p+-Si structure. The olive open squares, the red open circles, and the blue open triangles represent the writing, reading, and erasing sweeping biases, respectively. Inset: fitting of the I-V curve of the high conductance state in a log-log scale. (b) I-V characteristics of an OBD with an Ag/Alq3/nanostructured MoO3/Alq3/p+-Si structure. The olive squares, the red circles, and the blue triangles represent the writing, reading, and erasing sweeping biases, respectively. Inset: I-V characteristics of an OBD with an Ag/Alq3/p+-Si structure. The green squares and magenta circles are the first and second bias scans, respectively.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Al (2p) XPS curve of the Al/Alq3 interface of the OBD.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Surface morphology of the 5 nm thick MoO3 layer deposited on the Alq3/p+-Si.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
(a) Retention measurement of the OBD. The pink (upper) and green (lower) circles correspond high and low conductance states. (b) The reading currents after writing and erasing of the OBD for the first eight cycles. The red (upper) and olive (lower) circles correspond high and low conductance states.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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