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25 Jan 2010

Volume 96, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 96, 042501 (2010); http://dx.doi.org/10.1063/1.3291942 (3 pages)

Daniel Stickler, Robert Frömter, Holger Stillrich, Christian Menk, Carsten Tieg, Simone Streit-Nierobisch, Michael Sprung, Christian Gutt, Lorenz-M. Stadler, Olaf Leupold, Gerhard Grübel, and Hans Peter Oepen
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Physical device modeling of carbon nanotube/GaAs photovoltaic cells

Hong Li, Wan Khai Loke, Qing Zhang, and S. F. Yoon

Appl. Phys. Lett. 96, 043501 (2010); http://dx.doi.org/10.1063/1.3293452 (3 pages) | Cited 2 times

Online Publication Date: 25 January 2010

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Photovoltaic response from semiconducting single-walled carbon nanotubes/n-type GaAs heterojunctions has been investigated. We propose a detailed device model of the photovoltaic cell, in which electron transport can be described as follows. The thermionic emission and tunneling through the spike barrier caused by the conduction band discontinuity dominate electron transport under a low and high-forward bias, respectively. In contrast, the dominant transport mechanisms at low and high-reverse bias could be attributed to the direct and Fowler–Nordheim tunneling though a molecular junction, respectively. Within this framework, the current-voltage characteristics of the photovoltaic response can be quantitatively described.
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88.40.jp Multijunction solar cells
85.30.De Semiconductor-device characterization, design, and modeling
88.40.H- Solar cells (photovoltaics)

Characterization of random telegraph noise in gate induced drain leakage current of n- and p-type metal-oxide-semiconductor field-effect transistors

Ju-Wan Lee, Hyungcheol Shin, and Jong-Ho Lee

Appl. Phys. Lett. 96, 043502 (2010); http://dx.doi.org/10.1063/1.3292204 (3 pages) | Cited 4 times

Online Publication Date: 26 January 2010

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Random telegraph noise in gate induced drain leakage current of nanoscale n- and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) was observed and analyzed for the first time. Capture and emission probability of carrier was analyzed in terms of gate voltage and temperature. The emission times (τe) in n and pMOSFETs have no dependence on VGS but are strongly dependent on temperature since the τe is decreased more significantly with increasing temperature than the capture time (τc) in n and pMOSFETs. As VGS increases, the τc in n and pMOSFETs decreases.
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85.30.Tv Field effect devices

Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application

Goon-Ho Park and Won-Ju Cho

Appl. Phys. Lett. 96, 043503 (2010); http://dx.doi.org/10.1063/1.3293291 (3 pages) | Cited 5 times

Online Publication Date: 28 January 2010

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Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin SiO2 and Si3N4 dielectric layers were used as engineered tunneling barriers. High-k dielectrics were used as charge trapping and blocking oxide layer to improve the program/erase speed. The VARIOT type tunneling barrier composed of oxide-nitride-oxide layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase in interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.
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77.55.df For silicon electronics

Mechanism and reduction of temporal image sticking in ac plasma display panel

Choon-Sang Park and Heung-Sik Tae

Appl. Phys. Lett. 96, 043504 (2010); http://dx.doi.org/10.1063/1.3294629 (3 pages) | Cited 3 times

Online Publication Date: 28 January 2010

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It is found that temporal image sticking in ac plasma display panels (PDPs) is predominantly induced by organic impurities, such as CxHy, on the MgO surface. The vacuum ultraviolet produced during a short sustain discharge dissociates these organic impurities, such as CxHy, into C and H, where the latter then combines with the O from the MgO surface, resulting in the production of chemical compounds, including H2O, that lower the luminance by hindering the visible conversion of the phosphor layer. Thus, according to this mechanism, minimizing the residual organic impurities, such as CxHy, on the MgO surface is a key factor for removing temporal image sticking. Therefore, to reduce the residual impurity level on the MgO layer of a 50 in. full-high definition (HD) ac-PDP with an He (35%)-Xe (11%) content, the MgO layer is given rf-plasma treatment using various gases, and the experimental results show that Ar plasma treatment was most effective in eliminating the residual impurities on the MgO layer and thereby improving the temporal image sticking.
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52.75.-d Plasma devices
61.72.S- Impurities in crystals
78.55.Hx Other solid inorganic materials
52.77.-j Plasma applications

Probing atomic rearrangement events in resistive switching nanostructures

J. Ventura, J. P. Araujo, J. B. Sousa, Y. Liu, Z. Zhang, and P. P. Freitas

Appl. Phys. Lett. 96, 043505 (2010); http://dx.doi.org/10.1063/1.3298365 (3 pages) | Cited 3 times

Online Publication Date: 29 January 2010

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Resistive switching in metal-insulator-metal structures is being investigated aiming next generation nonvolatile memories. We studied the time evolution of the electrical resistance (R) of Ta/AlOx/Ta nanostructures displaying resistive switching. At low temperature and in the early switching stages we find rapid R-variations. However, as time proceeds, one sees R-jumps between terraces through different processes, such as discontinuous steps, two level, or dumped fluctuations. Furthermore, a wealth of active fluctuators is visible even after the current leads to no net resistance variations. This is reinforced at high temperatures, where the fluctuating rate and number of active fluctuators lead to complex signals.
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73.40.Rw Metal-insulator-metal structures
73.22.-f Electronic structure of nanoscale materials and related systems

Parasitic capacitance effect on programming performance of phase change random access memory devices

E. G. Yeo, L. P. Shi, R. Zhao, K. G. Lim, T. C. Chong, and I. Adesida

Appl. Phys. Lett. 96, 043506 (2010); http://dx.doi.org/10.1063/1.3298368 (3 pages) | Cited 3 times

Online Publication Date: 29 January 2010

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Parasitic capacitance has increasing implications on the programming performance of phase change random access memory (PCRAM) devices due to increased scaling and high frequency operation. PCRAM devices with larger parasitic capacitance were found to require higher applied voltage to amorphize due to a larger leakage current. The quenching time is also increased due to a longer voltage fall time during amorphization, resulting in a partially crystallized amorphous state. This partial amorphous state requires a lower applied voltage for crystallization, which means improved crystallization performance at the expense of amorphization. Multilevel devices could be implemented by varying the parasitic capacitance to achieve different amorphous resistance.
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85.50.Gk Non-volatile ferroelectric memories
61.43.-j Disordered solids
84.30.Sk Pulse and digital circuits

Polymer photodetector with voltage-adjustable photocurrent spectrum

En-Chen Chen, Chia-Yu Chang, Ji-Ting Shieh, Shin-Rong Tseng, Hsin-Fei Meng, Chain-Shu Hsu, and Sheng-Fu Horng

Appl. Phys. Lett. 96, 043507 (2010); http://dx.doi.org/10.1063/1.3284648 (3 pages) | Cited 3 times

Online Publication Date: 29 January 2010

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Polymer photodetectors with voltage-adjustable photoresponse from visible to near infrared range are demonstrated. Poly(3-hexylthiophene) and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM) blend is used as the active layer. The photoresponse can be continuously adjusted by the thickness of the active layer as well as the applied voltage bias. The thickness of the active layer is varied from 250 nm to 16.2 μm. The mechanism for the photoresponse adjusted by the thickness can be attributed to the absorption of the photons in the infrared range by thick PCBM layer. The mechanism for the photoresponse adjusted by the applied bias can be attributed to the carrier recombination reduction when the applied bias increases. The adjustable photodetector also has high operating speed up to 10 kHz.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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