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25 Jan 2010

Volume 96, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 96, 042501 (2010); http://dx.doi.org/10.1063/1.3291942 (3 pages)

Daniel Stickler, Robert Frömter, Holger Stillrich, Christian Menk, Carsten Tieg, Simone Streit-Nierobisch, Michael Sprung, Christian Gutt, Lorenz-M. Stadler, Olaf Leupold, Gerhard Grübel, and Hans Peter Oepen
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Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers

A. Crassous, V Garcia, K. Bouzehouane, S. Fusil, A. H. G. Vlooswijk, G. Rispens, B Noheda, M. Bibes, and A. Barthélémy

Appl. Phys. Lett. 96, 042901 (2010); http://dx.doi.org/10.1063/1.3295700 (3 pages) | Cited 17 times

Online Publication Date: 25 January 2010

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The persistency of ferroelectricity in ultrathin films allows their use as tunnel barriers. Ferroelectric tunnel junctions are used to explore the tunneling electroresistance effect—a change in the electrical resistance associated with polarization reversal in the ferroelectric barrier layer—resulting from the interplay between ferroelectricity and quantum-mechanical tunneling. Here, we use piezoresponse force microscopy and conductive-tip atomic force microscopy at room temperature to demonstrate the resistive readout of the polarization state through its influence on the tunnel current in PbTiO3 ultrathin ferroelectric films. The tunnel electroresistance reaches values of 50 000% through a 3.6 nm PbTiO3 film.
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77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.80.-e Ferroelectricity and antiferroelectricity
73.40.Gk Tunneling

Correlation between dielectric breakdown strength and interface polarization in barium strontium titanate glass ceramics

Jiajia Huang, Yong Zhang, Tao Ma, Hongtao Li, and Linwen Zhang

Appl. Phys. Lett. 96, 042902 (2010); http://dx.doi.org/10.1063/1.3293456 (3 pages) | Cited 6 times

Online Publication Date: 28 January 2010

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The correlation between the dielectric breakdown performance and interface polarization was studied by the measurements of the dielectric breakdown strength and impedance spectroscopy as a function of sintering temperatures in a BaO–SrO–TiO2–Al2O3–SiO2 glass ceramic system. It was found that dielectric breakdown strength strongly depends on the interface polarization. The sintering temperature dependence of breakdown strength is attributed to the variation in interfacial polarization based on the results of complex impedance analysis.
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77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ej Polarization and depolarization
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Cg PZT ceramics and other titanates
81.05.Pj Glass-based composites, vitroceramics
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

Rahul Suri, Casey J. Kirkpatrick, Daniel J. Lichtenwalner, and Veena Misra

Appl. Phys. Lett. 96, 042903 (2010); http://dx.doi.org/10.1063/1.3291620 (3 pages) | Cited 6 times

Online Publication Date: 28 January 2010

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Energy band alignment and band gap of Al2O3 and HfAlO films grown by atomic layer deposition on 4H–SiC were determined using x-ray photoelectron spectroscopy. Al2O3 exhibited a symmetric band profile with a conduction band offset (ΔEC) of 1.88 eV and a valence band offset (ΔEV) of 1.87 eV. HfAlO yielded a smaller ΔEC of 1.16 eV and ΔEV of 1.59 eV. The higher dielectric constant and higher effective breakdown field of HfAlO compared to Al2O3, coupled with sufficient electron and hole barrier heights, makes it a potential dielectric for use on 4H–SiC, and provokes interest in further investigation of HfAlO/4H–SiC properties.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.22.Ch Permittivity (dielectric function)
77.22.Jp Dielectric breakdown and space-charge effects
79.60.Jv Interfaces; heterostructures; nanostructures
77.55.D- High-permittivity gate dielectric films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

The influence of notches on domain dynamics in ferroelectric nanowires

M. McMillen, R. G. P. McQuaid, S. C. Haire, C. D. McLaughlin, L. W. Chang, A. Schilling, and J. M. Gregg

Appl. Phys. Lett. 96, 042904 (2010); http://dx.doi.org/10.1063/1.3300638 (3 pages) | Cited 3 times

Online Publication Date: 29 January 2010

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The extent to which notches inhibit axial switching of polarization in ferroelectric nanowires was investigated by monitoring the switching behavior of single crystal BaTiO3 wires before and after patterning triangular notches along their lengths. Static zero-field domain patterns suggested a strong domain-notch interaction, implying that notches should act as pinning sites for domain wall propagation. Surprisingly though, notches appeared to assist, rather than inhibit, polar switching. The origin of this effect was rationalized using finite element modeling of the electric field distribution along the notched wire; it was found that the air gap associated with the notch acted to enhance the local field, both in the air, and in the adjacent region of the ferroelectric. It seems that this local field enhancement outweighs any pinning interactions.
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77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
77.84.Cg PZT ceramics and other titanates

Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside

S. Toyoda, H. Kamada, T. Tanimura, H. Kumigashira, M. Oshima, T. Ohtsuka, Y. Hata, and M. Niwa

Appl. Phys. Lett. 96, 042905 (2010); http://dx.doi.org/10.1063/1.3298355 (3 pages) | Cited 9 times

Online Publication Date: 29 January 2010

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We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high-k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO2 layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high-k/SiO2 interface, which is well related to the Vth shift based on the interface dipole model.
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61.82.Fk Semiconductors
77.55.df For silicon electronics
79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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