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25 Jan 2010

Volume 96, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 042501 (2010); http://dx.doi.org/10.1063/1.3291942 (3 pages)

Daniel Stickler, Robert Frömter, Holger Stillrich, Christian Menk, Carsten Tieg, Simone Streit-Nierobisch, Michael Sprung, Christian Gutt, Lorenz-M. Stadler, Olaf Leupold, Gerhard Grübel, and Hans Peter Oepen
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Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band

Damien Bordel, Denis Guimard, Mohan Rajesh, Masao Nishioka, Emmanuel Augendre, Laurent Clavelier, and Yasuhiko Arakawa

Appl. Phys. Lett. 96, 043101 (2010); http://dx.doi.org/10.1063/1.3292591 (3 pages) | Cited 7 times

Online Publication Date: 25 January 2010

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We report the growth of self-assembled InAs/GaAs quantum dots (QDs) on germanium-on-insulator-on-silicon (GeOI) substrate by metal organic chemical vapor deposition. We demonstrate that the introduction of a single QD layer can act as an anti-phase-domain filter resulting in GaAs/GeOI layers with high structural quality and low surface roughness. High density (4×1010 cm−2) QDs were obtained with emission at 1.3 μm, narrow peak linewidth (33 meV), and identical photoluminescence intensity at room temperature similar to QDs obtained on conventional GaAs substrate. These results show the feasibility of the GeOI platform for the monolithic integration of QD-based lasers on silicon.
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68.65.Hb Quantum dots (patterned in quantum wells)
68.35.bg Semiconductors
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

A smooth optical superlens

Pratik Chaturvedi, Wei Wu, VJ Logeeswaran, Zhaoning Yu, M. Saif Islam, S. Y. Wang, R. Stanley Williams, and Nicholas X. Fang

Appl. Phys. Lett. 96, 043102 (2010); http://dx.doi.org/10.1063/1.3293448 (3 pages) | Cited 13 times

Online Publication Date: 25 January 2010

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We demonstrate a smooth and low loss silver (Ag) optical superlens capable of resolving features at 1/12th of the illumination wavelength with high fidelity. This is made possible by utilizing state-of-the-art nanoimprint technology and intermediate wetting layer of germanium (Ge) for the growth of flat silver films with surface roughness at subnanometer scales. Our measurement of the resolved lines of 30 nm half-pitch shows a full-width at half-maximum better than 37 nm, in excellent agreement with theoretical predictions. The development of this unique optical superlens leads promise to parallel imaging and nanofabrication in a single snapshot.
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42.79.Bh Lenses, prisms and mirrors
42.86.+b Optical workshop techniques

ac impedance analysis of a Ni-Nb-Zr-H glassy alloy with femtofarad capacitance tunnels

M. Fukuhara, M. Seto, and A. Inoue

Appl. Phys. Lett. 96, 043103 (2010); http://dx.doi.org/10.1063/1.3294294 (3 pages) | Cited 13 times

Online Publication Date: 25 January 2010

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A Nyquist diagram of a (Ni0.36Nb0.24Zr0.40)90H10 glassy alloy shows a semitrue circle, indicating that it is a conducting material with a total capacitance of 17.8 μF. The Bode plots showing the dependencies of its real and imaginary impedances, and phase on frequency suggest a simpler equivalent circuit having a resistor in parallel with a capacitor. Dividing the total capacitance (17.8 μF) by the capacitance of a single tunnel (0.9 fF), we deduced that this material has a high number of dielectric tunnels, which can be regarded as regular prisms separated from the electric-conducting distorted icosahedral Zr5Ni5Nb3 clusters by an average of 0.225 nm.
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77.22.-d Dielectric properties of solids and liquids
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials

A two-step plasma processing for gold nanoparticles supported on silicon near-infrared plasmonics

Giovanni Bruno, Giuseppe V. Bianco, Maria M. Giangregorio, Alberto Sacchetti, Pio Capezzuto, and Maria Losurdo

Appl. Phys. Lett. 96, 043104 (2010); http://dx.doi.org/10.1063/1.3291670 (3 pages) | Cited 10 times

Online Publication Date: 25 January 2010

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A two-step sputtering methodology for fabricating gold nanoparticles supported on silicon with tuneable surface plasmon resonance down to the near-infrared spectral range has been developed. This methodology uses modification of the wettability of Si surfaces by an intermediate O2 plasma treatment to decouple diameter and height of nanoparticles as tuneable parameters to tailor the plasmon resonance.
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81.16.-c Methods of micro- and nanofabrication and processing
81.15.Cd Deposition by sputtering
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.30.Er Solid metals and alloys
52.77.-j Plasma applications

Tailoring the local structure and electronic property of AuPd nanoparticles by selecting capping molecules

Feng Liu and Peng Zhang

Appl. Phys. Lett. 96, 043105 (2010); http://dx.doi.org/10.1063/1.3290245 (3 pages) | Cited 2 times

Online Publication Date: 26 January 2010

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Nine AuPd nanoparticle samples selectively capped with tetraoctylphosphonium bromide, primary amine and tertiary amine molecules were studied with the Au L3-edge x-ray absorption spectroscopy (XAS). The AuPd mixing patterns were analyzed by comparing the XAS results with the theoretical coordination numbers of 24 AuPd model clusters of varied size, Au concentration, and bimetal mixing pattern. It was found that the use of amines, particularly tertiary amine, produced a more homogeneous AuPd mixing pattern and the Au d-electron density was fine-tunable by tailoring the density of Au–Pd bonds. Mechanisms for the tailored structural and electronic properties of these nanoparticles were proposed.
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61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
73.22.-f Electronic structure of nanoscale materials and related systems
78.70.Dm X-ray absorption spectra
64.75.Ef Mixing
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.Bc Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)

Multipole-plasmon-enhanced förster energy transfer between semiconductor quantum dots via dual-resonance nanoantenna effects

Xiong-Rui Su, Wei Zhang, Li Zhou, Xiao-Niu Peng, Dai-Wen Pang, Shao-Ding Liu, Zhang-Kai Zhou, and Qu-Quan Wang

Appl. Phys. Lett. 96, 043106 (2010); http://dx.doi.org/10.1063/1.3295693 (3 pages) | Cited 8 times

Online Publication Date: 26 January 2010

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Ag nanoparticles with dipole and quadrupole plasmon are employed as dual-resonant nanoantenna to enhance both “receiving” and “emitting” fields resonantly. Strong enhancement of photoluminescence (PL) and highly efficient plasmon-assisted Förster energy transfer between CdSe quantum dots are demonstrated by employing Ag dual-resonant nanoantenna and micro-PL spectroscopy. The collaboration effect of quadrupole and dipole plasmon of Ag dual-resonant nanoantenna could find applications in plasmonics such as biosensoring and optical information processing.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.55.Et II-VI semiconductors
81.07.Bc Nanocrystalline materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.07.Ta Quantum dots

Ternary logic implemented on a single dopant atom field effect silicon transistor

M. Klein, J. A. Mol, J. Verduijn, G. P. Lansbergen, S. Rogge, R. D. Levine, and F. Remacle

Appl. Phys. Lett. 96, 043107 (2010); http://dx.doi.org/10.1063/1.3297906 (3 pages) | Cited 4 times

Online Publication Date: 26 January 2010

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We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a fin field effect transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through the device and the transconductance. A read out procedure that allows for voltage gain is proposed. Long numbers can be multiplied by addressing a sequence of Fin-FET transistors in a row.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits
85.75.Hh Spin polarized field effect transistors

Superhydrophobic surfaces with nanofibers or nanorods based on thiophene derivatives

Zhixin Jia, Mingxian Liu, Fang Liu, Yuanfang Luo, Demin Jia, and Baochun Guo

Appl. Phys. Lett. 96, 043108 (2010); http://dx.doi.org/10.1063/1.3293449 (3 pages) | Cited 1 time

Online Publication Date: 26 January 2010

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Fabricating superhydrophobic surfaces via self-assembly of organic conjugated small molecules is realized by spray-drying the thiophene derivates organic solutions. Formation of microsized pores and arrayed nanofibers or nanorods on the surfaces is responsible for the superhydrophobicity of the coatings. This technique can be applied for fabrication of large area superhydrophobic surfaces with conjugated molecules on different substrates.
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81.16.Dn Self-assembly
68.08.Bc Wetting
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
61.43.Gt Powders, porous materials

Subwavelength plasmonic waveguides based on ZnO nanowires and nanotubes: A theoretical study of thermo-optical properties

Xiao-Yang Zhang, A. Hu, Tong Zhang, Xiao-Jun Xue, J. Z. Wen, and W. W. Duley

Appl. Phys. Lett. 96, 043109 (2010); http://dx.doi.org/10.1063/1.3294300 (3 pages) | Cited 7 times

Online Publication Date: 26 January 2010

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We show theoretically that plasmonic waveguide structures in ZnO nanowires and nanotubes working at optical frequencies can achieve photonic waveguiding in a subdiffraction limit. The output intensity distribution, propagation length, and thermo-optical properties with different waveguide configurations are investigated. Our results show that these waveguides have the potential to develop either high performance thermally controlled nanoscale plasmonic devices or thermally insensitive waveguides by optimizing waveguide configurations.
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78.66.Bz Metals and metallic alloys
78.68.+m Optical properties of surfaces
78.20.N- Thermo-optic effects
42.79.Gn Optical waveguides and couplers

Three-dimensional carbon nanowall field emission arrays

E. Stratakis, R. Giorgi, M. Barberoglou, Th. Dikonimos, E. Salernitano, N. Lisi, and E. Kymakis

Appl. Phys. Lett. 96, 043110 (2010); http://dx.doi.org/10.1063/1.3298648 (3 pages) | Cited 9 times

Online Publication Date: 26 January 2010

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This letter reports on the fabrication of regular arrays of three dimensional graphitic structures, by growing carbon nanowalls on forests of conical Si microspikes. The high field enhancement achieved by this hierarchical growth process indicates a potential for electron emission applications. Experiments show that the field emission performance and long-term stability of the structures is by far superior to that of planar carbon nanowall mats and comparable to that reported for optimized carbon nanotube based emitters. The improved field emission properties of the fabricated arrays are attributed to the dual micro and nanomorphology of the emitters, involving a two-scale enhancement process.
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85.45.Db Field emitters and arrays, cold electron emitters
79.70.+q Field emission, ionization, evaporation, and desorption
81.16.-c Methods of micro- and nanofabrication and processing
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Low hole effective mass in thin InAs nanowires

Cláudia L. dos Santos, Paulo Piquini, Erika N. Lima, and Tome M. Schmidt

Appl. Phys. Lett. 96, 043111 (2010); http://dx.doi.org/10.1063/1.3280048 (3 pages) | Cited 2 times

Online Publication Date: 26 January 2010

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The efficiency of nanoscale electronic devices usually is limited by the decrease in the carrier mobilities when the dimensionality is reduced. Using first principles calculations our results reveal that the hole effective masses of InAs nanowires decrease significantly below a threshold diameter. The mobilities have been estimated, and it is shown that for an optimal range of diameters, the hole mobilities exceeds the bulk value by up to five times, whereas the electron mobilities remain comparable to the bulk one. These results indicate that there exists a diameter window where p-type InAs based high-speed nanodevices can be fabricated.
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61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
71.20.Nr Semiconductor compounds
73.63.Nm Quantum wires
73.50.Dn Low-field transport and mobility; piezoresistance
71.15.-m Methods of electronic structure calculations
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Nanoconfined ionic liquids under electric fields

Guoxin Xie, Jianbin Luo, Dan Guo, and Shuhai Liu

Appl. Phys. Lett. 96, 043112 (2010); http://dx.doi.org/10.1063/1.3292213 (3 pages) | Cited 13 times

Online Publication Date: 27 January 2010

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The effect of external electric fields (EEFs) on ionic liquid films confined within a nanogap has been investigated by measuring the film thickness with the thin film interferometry and calculating the effective viscosity. Experimental results indicated that the film thickness of ionic liquids could be increased obviously by the application of EEFs with strengths weaker than the electric interactions between cationic head groups and anions. The effect of EEFs on the confined ionic liquid film with a shorter alkyl side chain is more noticeable. It is thought that the charged anions and headgroups of the cations are structured near electrified walls to form ordered layers and short alkyl side chains at the interfaces are aligned along the EEF direction due to induced dipoles.
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68.15.+e Liquid thin films
66.20.-d Viscosity of liquids; diffusive momentum transport

Plasmonic interferences and optical modulations in dark-bright-dark plasmon resonators

Xiong-Rui Su, Zong-Suo Zhang, Li-Hui Zhang, Qun-Qing Li, Chun-Chong Chen, Zhong-Jian Yang, and Qu-Quan Wang

Appl. Phys. Lett. 96, 043113 (2010); http://dx.doi.org/10.1063/1.3293443 (3 pages) | Cited 15 times

Online Publication Date: 27 January 2010

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We fabricated dark-bright-dark plasmon resonators, investigated enhanced-transmission induced by plasmon transfer from the bright mode to the dark modes. Furthermore, we demonstrated interferences between dark plasmons excited by the near-field bright plasmons and directly excited by slantwise incident light, which leads to selective storage of excited energy in one of the two dark plasmon cells in the resonators by adjusting the phase between signal and control sources. This could find the applications in all-optical modulations.
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42.79.Hp Optical processors, correlators, and modulators

Low-voltage transparent electric-double-layer ZnO-based thin-film transistors for portable transparent electronics

Aixia Lu, Jia Sun, Jie Jiang, and Qing Wan

Appl. Phys. Lett. 96, 043114 (2010); http://dx.doi.org/10.1063/1.3294325 (3 pages) | Cited 9 times

Online Publication Date: 27 January 2010

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Room-temperature deposited 8.0 μm-thick mesoporous SiO2 dielectric shows a huge electric double layer (EDL) gate specific capacitance (4.16 μF/cm2). Battery drivable low-voltage (1.5 V) transparent EDL thin-film transistors (TFTs) with Al-doped ZnO nanocrystal channel layer gated by such dielectric are fabricated at room-temperature. The TFTs exhibit high-performance n-type transistor characteristics with a high field-effect mobility of 14.9 cm2/V s. The current on/off ratio and subthreshold gate voltage swing are estimated to be 2×106 and 82 mV/decade, respectively. Our results demonstrate that mesoporous SiO2 dielectrics with EDL effect are very promising for battery-powered portable transparent macroelectronics on temperature-sensitive substrates.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

The influence of coiled nanostructure on the enhancement of dielectric constants and electromagnetic shielding efficiency in polymer composites

Sung Hoon Park, Paul Theilmann, Keqin Yang, Apparao M. Rao, and Prabhakar R. Bandaru

Appl. Phys. Lett. 96, 043115 (2010); http://dx.doi.org/10.1063/1.3292214 (3 pages) | Cited 8 times

Online Publication Date: 28 January 2010

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We report through a comparison of the electromagnetic properties of polymer composites constituted of linear and nonlinear (helically coiled) carbon nanotubes (CNTs) that the electromagnetic interference (EMI) shielding efficiency could be much increased in the latter. A higher ac conductivity and relative dielectric permittivity (both ε′ and ε″) was recorded when coiled structures were used, and was ascribed to enhanced capacitive and electric field depolarization effects. The EMI shielding was related to the extended length/diameter aspect ratio of the CNTs. Our study has implications in the design of materials for EMI shielding, where nanostructure geometry could play a major role.
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77.22.Ch Permittivity (dielectric function)
73.40.-c Electronic transport in interface structures

Development of a tunable donor quantum dot in silicon

W. C. T. Lee, G. Scappucci, D. L. Thompson, and M. Y. Simmons

Appl. Phys. Lett. 96, 043116 (2010); http://dx.doi.org/10.1063/1.3299726 (3 pages) | Cited 2 times

Online Publication Date: 28 January 2010

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We have developed a method to integrate a low thermal budget silicon dioxide dielectric in ultrahigh vacuum to surface gate an in-plane gated phosphorus donor quantum dot in silicon. By combining in-plane and top-gate action, the resistance of the quantum dot tunnel barriers can be tuned to change the dot from open to closed where clear Coulomb blockade of the electron transport has been observed at 4 K. Additionally the scanning tunneling microscopy patterned in-plane gates can be used to independently tune the electron number on the dot. This enhanced tunability of donor based quantum dots bodes well for the fabrication of single donor architectures.
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81.16.Ta Atom manipulation
73.63.Kv Quantum dots
81.16.Nd Micro- and nanolithography
73.23.Hk Coulomb blockade; single-electron tunneling

Three-dimensional manipulation of gold nanoparticles with electro-enhanced capillary forces

J. Toset and G. Gomila

Appl. Phys. Lett. 96, 043117 (2010); http://dx.doi.org/10.1063/1.3297903 (3 pages) | Cited 2 times

Online Publication Date: 28 January 2010

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We demonstrate the possibility to manipulate 25 nm radius gold nanoparticles in the three spatial dimensions with an atomic force microscope with the use of electroenhanced capillary forces. We show that an enhanced water-bridge can be electrostatically induced between a conducting probe and a metallic nanoparticle by the application of a voltage pulse, which is able to exert a pulling capillary force on the nanoparticle strong enough to detach it from the substrate. The nanoparticle can then be moved, attached to the probe, and placed back to the desired location on the substrate simply by contacting it.
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81.16.Ta Atom manipulation
07.79.Lh Atomic force microscopes

Impact of noble metal nanostructures on surface trapping state of semiconductor quantum dots

Zhenling Yang, Yanan Wen, Qingkun Meng, Yuqiang Liu, Yunfei Song, Xing He, Aihua Li, Guoyang Yu, Yanqiang Yang, and Wenzhi Wu

Appl. Phys. Lett. 96, 043118 (2010); http://dx.doi.org/10.1063/1.3298018 (3 pages) | Cited 3 times

Online Publication Date: 28 January 2010

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The impact of noble metal nanostructures on the surface trapping state of semiconductor quantum dots was investigated by taking nanosecond time resolved photoluminescence measurements. It was observed that nonradiative resonant energy transfer from the excitonic state of quantum dots to Au nanofilm reduced the lifetime and intensity of excitonic state emission. No nonradiative resonant energy transfer from surface trapping state to Au nanofilm was observed. It is possibly implied that noble metal nanostructures have no impact on the surface trapping state of semiconductor quantum dots.
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81.07.Ta Quantum dots
73.21.La Quantum dots
78.47.D- Time resolved spectroscopy (>1 psec)
78.55.-m Photoluminescence, properties and materials
78.67.Hc Quantum dots

In situ tuning the optical properties of a cavity by wrinkling

Branko Kolaric, Hugues Vandeparre, Sylvain Desprez, Renaud A. L. Vallée, and Pascal Damman

Appl. Phys. Lett. 96, 043119 (2010); http://dx.doi.org/10.1063/1.3298740 (3 pages) | Cited 6 times

Online Publication Date: 28 January 2010

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In this letter we propose an original, in situ, approach to tune the optical properties of an optical cavity, based on the wrinkling of compressed metal/polymer multilayer thin films. This phenomenon is conceptually described, simulated, and experimentally confirmed. The main idea is to use wrinkling to modulate the effective refractive index of the upper interface. This modulation induces a spectral shift of the cavity modes. The work presented here constitutes a first step to the development of stretchable and curved photonics.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
42.70.Jk Polymers and organics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

First contact-charging of gold nanoparticles by electrostatic force microscopy

D. Prime and S. Paul

Appl. Phys. Lett. 96, 043120 (2010); http://dx.doi.org/10.1063/1.3300731 (3 pages) | Cited 3 times

Online Publication Date: 29 January 2010

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The use of nanoparticle materials in the manufacture of electronic polymer memory devices is on the rise. Organic memory devices are fabricated by depositing a blend of organic polymer, small organic molecules, and nanoparticles between two metal electrodes. The primary aim is to produce devices that exhibit two distinct electrical conductance states when control voltages are applied. By retaining the states when power is removed can be viewed as the realization of nonvolatile memory. In this letter, an attempt is made to further understand the conundrums that scholars in this field are currently facing, with questions about the nanoparticle charging mechanism being investigated.
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73.40.-c Electronic transport in interface structures
68.47.Pe Langmuir-Blodgett films on solids; polymers on surfaces; biological molecules on surfaces

Structural and dynamical heterogeneity in molten Si-rich oxides

S. Q. Wu, C. Z. Wang, Z. Z. Zhu, and K. M. Ho

Appl. Phys. Lett. 96, 043121 (2010); http://dx.doi.org/10.1063/1.3298555 (3 pages) | Cited 2 times

Online Publication Date: 29 January 2010

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Ab initio molecular dynamics simulations are performed to study the structural and dynamical properties of molten Si oxides. Segregation of SiOy (y<2) and pure Si network are clearly observed in the Si-rich oxide liquids. The size of Si-aggregate regions increases with increasing Si composition. The dynamical properties of the Si atoms with different local environments are different due to the “oxygen slowing-down” effect. This structural and dynamical heterogeneity is consistent with previous experimental studies, and provides useful insight into the role of the Si oxide shell in the oxide-assisted growth of Si nanowires.
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61.25.-f Studies of specific liquid structures
64.75.-g Phase equilibria
61.20.Ja Computer simulation of liquid structure

Morphological and topological analysis of coarsened nanoporous gold by x-ray nanotomography

Yu-chen Karen Chen, Yong S. Chu, JaeMock Yi, Ian McNulty, Qun Shen, Peter W. Voorhees, and David C. Dunand

Appl. Phys. Lett. 96, 043122 (2010); http://dx.doi.org/10.1063/1.3285175 (3 pages) | Cited 14 times

Online Publication Date: 29 January 2010

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We used x-ray nanotomography to characterize the three-dimensional (3D) morphology and topology of dealloyed nanoporous gold after coarsening. The interface shape distribution obtained from the nanotomography measurement shows that the coarsening does not proceed by bulk diffusion. The surface normal distribution shows that the morphology of the nanoporous gold is anisotropic. The topology of nanoporous gold is similar to that of other bicontinuous structures created by phase separation, despite the radically different method used to produce the structures. This work opens the door to time-resolved, in situ studies of coarsening of nanoporous gold in 3D.
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61.43.Gt Powders, porous materials
66.30.Pa Diffusion in nanoscale solids
61.46.-w Structure of nanoscale materials
66.30.Fq Self-diffusion in metals, semimetals, and alloys
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