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Applied Physics Letters / Volume 96 / Issue 5 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 96, 053308 (2010); http://dx.doi.org/10.1063/1.3309704 (3 pages)

Transport in organic semiconductors in large electric fields: From thermal activation to field emission

J. H. Worne1, J. E. Anthony2, and D. Natelson1,3

1Department of Electrical and Computer Engineering, Rice University, 6100 Main St., Houston, Texas 77005, USA
2Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055, USA
3Department of Physics and Astronomy, Rice University, 6100 Main St., Houston, Texas 77005, USA

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(Received 15 December 2009; accepted 16 January 2010; published online 5 February 2010)

Understanding charge transport in organic semiconductors in large electric fields is relevant to many applications. We present transport measurements in organic field-effect transistors based on poly(3-hexylthiophene) and 6,13-bis(triisopropyl-silylethynyl) (TIPS) pentacene with short channels, from room temperature down to 4.2 K. Near 300 K transport in both systems is well described by thermally assisted hopping with Poole–Frenkel-type enhancement of the mobility. At low temperatures and large gate voltages, transport in both materials becomes nearly temperature independent, crossing over into field-driven tunneling. These data, particularly in TIPS-pentacene, show that great caution must be exercised when considering more exotic (e.g., Tomonaga–Luttinger liquid) interpretations of transport.

© 2010 American Institute of Physics

ERRATUM

  1. Erratum: “Transport in organic semiconductors in large electric fields: From thermal activation to field emission” [Appl. Phys. Lett. 96, 053308 (2010)]
    J. H. Worne et al.
    Appl. Phys. Lett. 96, 139902 (2010)APPLAB000096000013139902000001

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KEYWORDS and PACS

Keywords

field emission, hopping conduction, organic field effect transistors, organic semiconductors, Poole-Frenkel effect

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3309704

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
ID−VDS curves for device A over a 100 K temperature range at Vg = −80 V. Fit lines are generated from a PF-type field dependence of the mobility, as explained in the text. The deviation from theory as T decreases indicates the beginning of the crossover from activated hopping into field emission.

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FIG.2
Plotting ID vs VDS in scaled coordinates as suggested by Eq. ( 2 ). Top data is on device A (P3HT, VG = −80 V), while bottom data is on device B (TIPS-pentacene, VG = −70 V). Solid lines are fits to Eq. ( 2 ). For device A, α = 5.43, γ′ = 4×10−3; for device B, α = 7.1, γ′ = 3×10−3; for both fits, we used the theoretical expectation β = α+1. As explained in the text, the apparent scaling collapse is fortuitous, rather than the result of TLL physics.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Top is P3HT (device A) measured at various gate voltages at 4.2 K; bottom is TIPS-pentacene (device B) measured at 5 K. Black lines are fits using the field emission hopping model expression for mobility, μ∝exp[−(E0/E)1/2].

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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