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Applied Physics Letters / Volume 96 / Issue 5 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 053503 (2010); http://dx.doi.org/10.1063/1.3304167 (3 pages)

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

Daniele Ielmini, Federico Nardi, and Carlo Cagli

Dipartimento di Elettronica e Informazione, Politecnico di Milano, and IUNET, Piazza L. da Vinci 32, I-20133 Milano, Italy

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(Received 13 November 2009; accepted 11 January 2010; published online 2 February 2010)

Resistive-switching memory (RRAM) is attracting a considerable interest for the development of high-density nonvolatile memories. However, several scaling and reliability issues still affect the development path of RRAM. This work addresses random telegraph-signal noise (RTN) of the RRAM current, potentially affecting the memory stability. We show a clear resistance dependence of the RTN amplitude, and we propose a physical model describing the interaction of the localized current with a fluctuating defect. By estimating the diameter of the conductive filament, the model quantitatively accounts for the observed RTN amplitude, thus allowing for an analytical prediction of state stability in RRAMs.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

circuit reliability, random noise, random-access storage

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3304167

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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