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1 Feb 2010

Volume 96, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 053107 (2010); http://dx.doi.org/10.1063/1.3280078 (3 pages)

Desalegne Teweldebrhan, Vivek Goyal, Muhammad Rahman, and Alexander A. Balandin
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Collection of suspended particles in a drop using low frequency vibration

James Whitehill, Adrian Neild, Tuck Wah Ng, and Mark Stokes

Appl. Phys. Lett. 96, 053501 (2010); http://dx.doi.org/10.1063/1.3298741 (3 pages) | Cited 10 times

Online Publication Date: 1 February 2010

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Particle collection at low frequencies has been erstwhile demonstrated with dry particles and particles floating on the liquid surface. Nevertheless, the ability to collect suspended particles in a fluid offers arguably wider usage in the context of microfluidic or “lab-on-a-chip” systems. This is demonstrated here via an approach of vibrating a droplet to form resonant shapes on the liquid-gas interface. This results in particles ranging in size from 40 to 120 μm being collected predominantly at the solid-liquid interface due to a hydrodynamic focusing mechanism that develops through multiple cycles.
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47.85.Np Fluidics
47.61.-k Micro- and nano- scale flow phenomena
47.85.-g Applied fluid mechanics

Dual-mode operation of flexible piezoelectric polymer diaphragm for intracranial pressure measurement

Chunyan Li, Pei-Ming Wu, Lori A. Shutter, and Raj K. Narayan

Appl. Phys. Lett. 96, 053502 (2010); http://dx.doi.org/10.1063/1.3299003 (3 pages) | Cited 4 times

Online Publication Date: 1 February 2010

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The dual-mode operation of a polyvinylidene fluoride trifluoroethylene (PVDF-TrFE) piezoelectric polymer diaphragm, in a capacitive or resonant mode, is reported as a flexible intracranial pressure (ICP) sensor. The pressure sensor using a capacitive mode exhibits a higher linearity and less power consumption than resonant mode operated pressure sensor. In contrast, the latter provides better sensitivity and easier adaption for wireless application. The metrological properties of the dual-mode ICP sensor being described are satisfactory in vitro. We propose that the piezoelectric polymer diaphragm has a promising future in intracranial pressure monitoring.
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87.85.Ox Biomedical instrumentation and transducers, including micro-electro-mechanical systems (MEMS)
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories

Daniele Ielmini, Federico Nardi, and Carlo Cagli

Appl. Phys. Lett. 96, 053503 (2010); http://dx.doi.org/10.1063/1.3304167 (3 pages) | Cited 12 times

Online Publication Date: 2 February 2010

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Resistive-switching memory (RRAM) is attracting a considerable interest for the development of high-density nonvolatile memories. However, several scaling and reliability issues still affect the development path of RRAM. This work addresses random telegraph-signal noise (RTN) of the RRAM current, potentially affecting the memory stability. We show a clear resistance dependence of the RTN amplitude, and we propose a physical model describing the interaction of the localized current with a fluctuating defect. By estimating the diameter of the conductive filament, the model quantitatively accounts for the observed RTN amplitude, thus allowing for an analytical prediction of state stability in RRAMs.
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84.30.Sk Pulse and digital circuits

Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device

Jung Won Seo, Seung Jae Baik, Sang Jung Kang, Yun Ho Hong, Ji-Hwan Yang, Liang Fang, and Koeng Su Lim

Appl. Phys. Lett. 96, 053504 (2010); http://dx.doi.org/10.1063/1.3308471 (3 pages) | Cited 4 times

Online Publication Date: 3 February 2010

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We demonstrated that an Al/p-type amorphous silicon (p-a-Si)/Al switching device exhibits stable, nonvolatile resistive switching characteristics as well as reliable data retention at 85 °C. It is directly observed that the conducting filament is created after electroforming and incorporates the top metal migrated or diffused into a-Si layer. In addition, by analyzing the constitution of the conducting filament, we investigated the microscopic nature of the conducting filament. These results suggest that the Al/p-a-Si/Al device has potential for future nonvolatile memory applications.
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85.30.-z Semiconductor devices
81.05.Gc Amorphous semiconductors
81.10.Fq Growth from melts; zone melting and refining
84.30.Sk Pulse and digital circuits

Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors

Y. S. Puzyrev, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides

Appl. Phys. Lett. 96, 053505 (2010); http://dx.doi.org/10.1063/1.3293008 (3 pages) | Cited 8 times

Online Publication Date: 3 February 2010

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It has long been known that GaN high-electron-mobility transistors can degrade significantly under hot electron stress. More recently, an increase in the yellow luminescence was observed under similar stress conditions. The two phenomena have been attributed to defects but no specific physical mechanism has been proposed. Here we report first-principles density-functional calculations of hydrogenated Ga vacancies and show that hydrogen release by hot electrons provides an explanation for both phenomena.
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85.30.Tv Field effect devices
72.20.Dp General theory, scattering mechanisms
72.20.Ht High-field and nonlinear effects
78.55.Cr III-V semiconductors
61.72.jd Vacancies

Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping

A. Fet, V. Häublein, A. J. Bauer, H. Ryssel, and L. Frey

Appl. Phys. Lett. 96, 053506 (2010); http://dx.doi.org/10.1063/1.3303976 (3 pages)

Online Publication Date: 4 February 2010

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In this letter, an ion implantation approach to engineer the effective work function is discussed and an empirical model to explain the mechanisms of work function change is proposed. It is shown that by doping a TiN/HfSiOx stack with La and F, a silicon conduction band edge and valence band edge metal effective work function of 3.8 and 5.4 eV, respectively, can be achieved. The empirical correlation of the achieved effective work function to the electronegativity of the dopant element is explained.
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73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.U- Doping and impurity implantation
77.55.df For silicon electronics
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Reduced photocurrent lag using unipolar solid-state photoconductive detector structures: Application to stabilized n-i-p amorphous selenium

A. H. Goldan, O. Tousignant, L. Laperrière, and K. S. Karim

Appl. Phys. Lett. 96, 053507 (2010); http://dx.doi.org/10.1063/1.3302454 (3 pages) | Cited 4 times

Online Publication Date: 5 February 2010

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Memory effects in direct detection solid-state photoconductors are attributed to interrupted charge transport by traps in the bulk and result in persistent photocurrent lag and ghosting. The identified sources for image lag following the cessation of x-ray exposure are the inhomogeneous electric field’s spatial distribution and the detrapping of the bulk space charge. This work shows that the latter is the dominant mechanism for the persistent photocurrent lag in stabilized n-i-p amorphous selenium photoconductors and proposes unipolar charge-sensing detector design for reducing image lag and improving the temporal performance of direct conversion x-ray imagers.
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72.40.+w Photoconduction and photovoltaic effects
79.60.-i Photoemission and photoelectron spectra
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
77.22.Jp Dielectric breakdown and space-charge effects

Multiferroic heterostructure fringe field tuning of meander line microstrip ferrite phase shifter

A. L. Geiler, S. M. Gillette, Y. Chen, J. Wang, Z. Chen, S. D. Yoon, P. He, J. Gao, C. Vittoria, and V. G. Harris

Appl. Phys. Lett. 96, 053508 (2010); http://dx.doi.org/10.1063/1.3309592 (3 pages) | Cited 12 times

Online Publication Date: 5 February 2010

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Magnetic fringe fields emanating from a multiferroic heterostructure composite of Terfenol-D and lead magnesium niobate-lead titanate were utilized to actively tune a meander line microstrip ferrite phase shifter operating above ferrimagnetic resonance at C-band. Differential phase shifts of 65° were measured when tuned with an applied voltage to the multiferroic heterostructure. This demonstration of magnetoelectric field generation provides an alternative approach to tuning broadband planar microwave magnetic devices where neither strain nor direct electromagnetic coupling is experienced between device and multiferroic transducer.
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85.70.Ge Ferrite and garnet devices
84.40.Dc Microwave circuits
75.85.+t Magnetoelectric effects, multiferroics
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
84.30.-r Electronic circuits

Negative differential resistance and rectifying behaviors in phenalenyl molecular device with different contact geometries

Zhi-Qiang Fan and Ke-Qiu Chen

Appl. Phys. Lett. 96, 053509 (2010); http://dx.doi.org/10.1063/1.3309708 (3 pages) | Cited 40 times

Online Publication Date: 5 February 2010

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The electronic transport properties in phenalenyl molecular device are studied by using nonequilibrium Green’s functions in combination with the density-functional theory. The results show that the electronic transport properties are strongly dependent on the contact geometry. The negative differential resistance behavior with large peak to valley ratio is observed when the molecule contacts the Au electrodes through two second-nearest sites or one second-nearest site and one third-nearest site, while the rectifying performance is observed only when the molecule contacts the Au electrodes through one second-nearest site and one third-nearest site. The mechanisms are proposed for these phenomena.
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85.65.+h Molecular electronic devices

Low-voltage indium gallium zinc oxide thin film transistors on paper substrates

Wantae Lim, E. A. Douglas, D. P. Norton, S. J. Pearton, F. Ren, Young-Woo Heo, S. Y. Son, and J. H. Yuh

Appl. Phys. Lett. 96, 053510 (2010); http://dx.doi.org/10.1063/1.3309753 (3 pages) | Cited 15 times

Online Publication Date: 5 February 2010

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We have fabricated bottom-gate amorphous (α-) indium-gallium-zinc-oxide (InGaZnO4) thin film transistors (TFTs) on both paper and glass substrates at low processing temperature ( ≤ 100 °C). As a water and solvent barrier layer, cyclotene (BCB 3022–35 from Dow Chemical) was spin-coated on the entire paper substrate. TFTs on the paper substrates exhibited saturation mobility (μsat) of 1.2 cm2 V−1 s−1, threshold voltage (VTH) of 1.9 V, subthreshold gate-voltage swing (S) of 0.65 V decade−1, and drain current on-to-off ratio (ION/IOFF) of ∼ 104. These values were only slightly inferior to those obtained from devices on glass substrates (μsat ∼ 2.1 cm2 V−1 s−1, VTH ∼ 0 V, S ∼ 0.74 V decade−1, and ION/IOFF = 105–106). The uneven surface of the paper sheet led to relatively poor contact resistance between source-drain electrodes and channel layer. The ability to achieve InGaZnO TFTs on cyclotene-coated paper substrates demonstrates the enormous potential for applications such as low-cost and large area electronics.
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85.30.Tv Field effect devices
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