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1 Feb 2010

Volume 96, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 96, 053107 (2010); http://dx.doi.org/10.1063/1.3280078 (3 pages)

Desalegne Teweldebrhan, Vivek Goyal, Muhammad Rahman, and Alexander A. Balandin
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Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics

H. Sinha, J. L. Lauer, M. T. Nichols, G. A. Antonelli, Y. Nishi, and J. L. Shohet

Appl. Phys. Lett. 96, 052901 (2010); http://dx.doi.org/10.1063/1.3306729 (3 pages) | Cited 11 times

Online Publication Date: 2 February 2010

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High frequency capacitance-voltage (C-V) measurements are used to determine the effects of vacuum ultraviolet (VUV) and ultraviolet (UV) irradiation on defect states in porous low-k organosilicate (SiCOH) dielectrics. The characteristics show that VUV photons depopulate trapped electrons from defect states within the dielectric creating trapped positive charge. This is evidenced by a negative shift in the flat-band voltage of the C-V characteristic. UV irradiation reverses this effect by repopulating the defect states with electrons photoinjected from the silicon substrate. Thus, UV reduces the number of trapped positive charges in the dielectric and can effectively repair processing-induced damage.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Pv Polymers, organic compounds
77.55.Bh Low-permittivity dielectric films
71.55.Ht Other nonmetals

Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

O. Bethge, S. Abermann, C. Henkel, C. J. Straif, H. Hutter, J. Smoliner, and E. Bertagnolli

Appl. Phys. Lett. 96, 052902 (2010); http://dx.doi.org/10.1063/1.3295698 (3 pages) | Cited 7 times

Online Publication Date: 2 February 2010

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ZrO2/GeO2 dielectrics are grown on germanium substrates by Atomic Layer Deposition (ALD) at substrate temperatures of 150, 200, and 250 °C, respectively. The impact of the deposition temperature on the electrical and structural properties of MOS capacitors is investigated. A significant influence of the ALD temperature on the high frequency capacitance in inversion can be observed, resulting in a shift of the minority carrier response time from 1.15 to 0.2 μs. Time-of-flight secondary ion mass spectroscopy investigations indicate a distinctive depletion of interfacial GeO at higher ALD temperatures, which give rise to trap levels near the oxide/Ge interface.
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84.32.Tt Capacitors
82.45.Un Dielectric materials in electrochemistry

Study of defect-dipoles in an epitaxial ferroelectric thin film

C. M. Folkman, S. H. Baek, C. T. Nelson, H. W. Jang, T. Tybell, X. Q. Pan, and C. B. Eom

Appl. Phys. Lett. 96, 052903 (2010); http://dx.doi.org/10.1063/1.3298362 (3 pages) | Cited 13 times

Online Publication Date: 2 February 2010

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We have analyzed the defect contributions to the in-plane polarization switching of epitaxial (001) BiFeO3 thin films on (110) TbScO3 substrates. Interdigitated electrodes were patterned with respect to ferroelectric stripe domains in the BiFeO3 film. Polarization measurements exhibited a clear double hysteresis caused by the presence of a static defect field ( ∼ 40 kV/cm); the field resulted from ordered defect-dipoles initially aligned to the spontaneous polarization. By monitoring the defect field, both realignment and disassociation of the defect-dipoles were demonstrated. These results establish the arrangement of defect-dipoles in epitaxial ferroelectric thin films, guiding technologies and opening an avenue for defect related studies.
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77.55.Px Epitaxial and superlattice films
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

X-ray absorption fine structure studies of Mn coordination in doped perovskite SrTiO3

I. Levin, V. Krayzman, J. C. Woicik, A. Tkach, and P. M. Vilarinho

Appl. Phys. Lett. 96, 052904 (2010); http://dx.doi.org/10.1063/1.3298369 (3 pages) | Cited 9 times

Online Publication Date: 2 February 2010

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The coordination of Mn in doped SrTiO3 ceramics having nominal compositions SrTi0.98Mn0.02O3 and Sr0.98Mn0.02TiO3 was analyzed using x-ray absorption fine structure (XAFS) measurements. As expected, Mn4+ substitution for Ti4+ leads to Mn occupancy of the octahedral B-sites of ABO3 perovskite lattice with a Mn–O bond distance of 1.902 Å (compared to 1.953 Å for Ti–O) and no significant local distortions around the Mn atoms. In contrast, for the composition Sr0.98Mn0.02TiO3, Mn segregates to both the A-sites (as Mn2+) and the B-sites (predominantly as Mn4+). Extended XAFS confirms strong ( ≈ 0.77 Å) displacements of Mn2+ cations off the ideal A-site positions along 〈001〉 directions with a significant distortion of several coordination shells around the dopant atoms.
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61.50.Lt Crystal binding; cohesive energy
78.70.Dm X-ray absorption spectra
64.75.-g Phase equilibria
61.72.up Other materials

Electric field dependence of nonlinearity parameters and third order elastic constants of 0.70Pb(Mg1/3Nb2/3)O3–0.30PbTiO3 single crystal

Xiaozhou Liu, Shujun Zhang, Jun Luo, Thomas R. Shrout, and Wenwu Cao

Appl. Phys. Lett. 96, 052905 (2010); http://dx.doi.org/10.1063/1.3309593 (3 pages)

Online Publication Date: 4 February 2010

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Through second harmonic measurements, the ultrasonic nonlinearity parameters of [001]c and [111]c polarized 0.70Pb(Mg1/3Nb2/3)O3–0.30PbTiO3(PMN–0.3PT) single crystals have been measured as a function of bias electric field. It was found that the nonlinearity parameter increases almost linearly with field at low field but shows a drastic increase near the coercive field. The [111]c polarized single domain crystal has much smaller nonlinearity parameter than that of the [001]c polarized multidomain crystal. Based on effective symmetries of these crystals, we were able to derive the field dependence of several third order elastic constants, which are important parameters for high field applications.
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77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
62.20.D- Elasticity

Mixed conduction and chemical diffusion in a Pb(Zr0.53,Ti0.47)O3 buried capacitor structure

Niall J. Donnelly and Clive A. Randall

Appl. Phys. Lett. 96, 052906 (2010); http://dx.doi.org/10.1063/1.3302452 (3 pages) | Cited 5 times

Online Publication Date: 5 February 2010

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Impedance spectroscopy is performed on a buried capacitor structure composed of a PZT-0.75% Nb ceramic with platinum electrodes. The ionic and electronic conductivities (σion,σelec) are extracted from the impedance spectra using an equivalent circuit based on the premise of mixed conduction. In the temperature range 500–700 °C, a change in local pO2 mainly affects σelec, suggesting that the samples are ionically compensated, i.e., [VO••] = [VPb″]. The chemical diffusion coefficient, math, is obtained by a conductivity relaxation technique assuming two-dimensional diffusion geometry. In comparison to BaTiO3, or SrTiO3, the chemical diffusivity is found to be relatively high, math = 2.0×10−4 cm2 s−1 (700 °C, in air).
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72.60.+g Mixed conductivity and conductivity transitions
66.30.H- Self-diffusion and ionic conduction in nonmetals
77.84.Cg PZT ceramics and other titanates
82.45.Rr Electroanalytical chemistry
82.80.Fk Electrochemical methods
84.32.Tt Capacitors

Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices

Youngmin Park, Jong Kyung Park, Myeong Ho Song, Sung Kyu Lim, Jae Sub Oh, Moon Sig Joo, Kwon Hong, and Byung Jin Cho

Appl. Phys. Lett. 96, 052907 (2010); http://dx.doi.org/10.1063/1.3309693 (3 pages) | Cited 2 times

Online Publication Date: 5 February 2010

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The structural and compositional dependence of gadolinium-aluminum oxide (GdAlO) for application to nonvolatile memory is investigated. An addition of Gd into AlO reduces the leakage current, which improves the erase window. The GdAlO film crystallizes into many different phases after annealing depending on the Gd percentage when the amount of Gd exceeds 49%. The crystallization of the GdAlO film causes a change in the band gap of the GdAlO film, resulting in a change of the retention properties. It is also found that crystallized GdAlO is more vulnerable to the generation of traps by electrical stress. The results indicate that careful optimization of the Gd percentage in GdAlO is necessary to utilize the benefit of GdAlO with minimum deterioration in the charge retention property.
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77.55.D- High-permittivity gate dielectric films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.aj Insulators
84.30.Sk Pulse and digital circuits
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
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