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1 Feb 2010

Volume 96, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 96, 053107 (2010); http://dx.doi.org/10.1063/1.3280078 (3 pages)

Desalegne Teweldebrhan, Vivek Goyal, Muhammad Rahman, and Alexander A. Balandin
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Cyclodextrins: Promising candidate media for high-capacity hydrogen adsorption

Haiyan Zhu, Yongning Liu, Yuanzhen Chen, and Zhenyi Wen

Appl. Phys. Lett. 96, 054101 (2010); http://dx.doi.org/10.1063/1.3294631 (3 pages) | Cited 1 time

Online Publication Date: 1 February 2010

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Cyclodextrins (CDs) found with inexpensive starch are in a particular hollow and truncated cone-type configuration. First-principles calculations indicate that a single α-CD can adsorb up to 48 hydrogen molecules by the influence of the oxygen structures in the α-CD’s hydroxyl (-OH) and epoxy functional groups; while the result additionally shows that the gravimetric storage capacity can reach to 9.8 wt %. These results are helpful for developing high-capacity hydrogen-storage materials.
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88.30.R- Hydrogen storage
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.43.Mn Adsorption kinetics
61.50.Lt Crystal binding; cohesive energy
61.43.Gt Powders, porous materials
61.41.+e Polymers, elastomers, and plastics

B diffusion in implanted Ni2Si and NiSi layers

I. Blum, A. Portavoce, L. Chow, D. Mangelinck, K. Hoummada, G. Tellouche, and V. Carron

Appl. Phys. Lett. 96, 054102 (2010); http://dx.doi.org/10.1063/1.3303988 (3 pages) | Cited 3 times

Online Publication Date: 4 February 2010

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B diffusion in implanted Ni2Si and NiSi layers has been studied using secondary ion mass spectrometry, and compared to B redistribution profiles obtained after the reaction of a Ni layer on a B-implanted Si(001) substrate, in same annealing conditions (400–550 °C). B diffusion appears faster in Ni2Si than in NiSi. The B solubility limit is larger than 1021 atom cm−3 in Ni2Si, while it is ∼ 3×1019 atom cm−3 in NiSi. The solubility limit found in NiSi is in agreement with the plateau observed in B profiles measured in NiSi after the reaction of Ni on B-implanted Si.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
61.72.sh Impurity distribution
61.72.Cc Kinetics of defect formation and annealing
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
64.75.Bc Solubility
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