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1 Feb 2010

Volume 96, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 96, 053107 (2010); http://dx.doi.org/10.1063/1.3280078 (3 pages)

Desalegne Teweldebrhan, Vivek Goyal, Muhammad Rahman, and Alexander A. Balandin
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Nanophononic thin-film filters and mirrors studied by picosecond ultrasonics

N. D. Lanzillotti-Kimura, B. Perrin, A. Fainstein, B. Jusserand, and A. Lemaître

Appl. Phys. Lett. 96, 053101 (2010); http://dx.doi.org/10.1063/1.3295701 (3 pages) | Cited 1 time

Online Publication Date: 1 February 2010

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Optimized acoustic phonon thin-film filters are studied by picosecond ultrasonics. A broadband mirror and a color filter based on aperiodic multilayers were optimized to work in the subterahertz range, and grown by molecular beam epitaxy. Time resolved differential optical reflectivity experiments were performed with pump and probe pulses incident on opposite sides of the substrate. We provide broadband transmission curves for the phonon devices. The results are in good agreement with standard transfer matrix method simulations. In addition, we analyze the effects of the free surface and the influence of an Al capping layer on the response of the aperiodic devices.
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
42.79.Bh Lenses, prisms and mirrors
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
68.55.A- Nucleation and growth

ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector

Y. H. Leung, Z. B. He, L. B. Luo, C. H. A. Tsang, N. B. Wong, W. J. Zhang, and S. T. Lee

Appl. Phys. Lett. 96, 053102 (2010); http://dx.doi.org/10.1063/1.3299269 (3 pages) | Cited 16 times

Online Publication Date: 1 February 2010

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We demonstrated a simple and low-cost fabrication of ZnO p-n homojunction. The junction consists of n-type ZnO nanowires array by a hydrothermal method covered with p-type Al, N co-doped ZnO film by a sol-gel method. The junction exhibits good rectification characteristics, with reverse leakage current and rectification ratio of ∼ 5 μA and ∼ 150 at bias of 3 V, respectively. The junction is operated as a photodetector when light radiation is shined on the glass-side of the device. The photodetector shows a peak responsivity at 384 nm with UV-visible responsivity ratio (R384 nm/R550 nm) of ∼ 70 at an operating bias of −3 V.
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81.16.-c Methods of micro- and nanofabrication and processing
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Ei Rectification
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.ag Semiconductors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Enhancement of ferromagnetism in Pd nanoparticle by swift heavy ion irradiation

P. K. Kulriya, B. R. Mehta, D. K. Avasthi, D. C. Agarwal, P. Thakur, N. B. Brookes, A. K. Chawla, and R. Chandra

Appl. Phys. Lett. 96, 053103 (2010); http://dx.doi.org/10.1063/1.3297882 (3 pages) | Cited 9 times

Online Publication Date: 1 February 2010

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In this study, the effect of swift heavy ion irradiation on the magnetic properties of the Pd nanoparticles has been investigated. Structural investigations along with superconducting quantum interface device measurements show that ferromagnetic properties of the Pd nanoparticles are due to the deviation of their electronic structure from that of bulk. The electronic structure is further modified due to the creation of defects on ion irradiation, which results in 20 times increase in the saturation magnetization. The present study establishes that the defect induced modification of Pd 4d electronic structure is responsible for the ferromagnetic properties of the Pd nanoparticles.
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75.50.Tt Fine-particle systems; nanocrystalline materials
73.22.-f Electronic structure of nanoscale materials and related systems
61.80.Jh Ion radiation effects
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Cc Other ferromagnetic metals and alloys

High-performance surface-enhanced Raman scattering sensors based on Ag nanoparticles-coated Si nanowire arrays for quantitative detection of pesticides

X. T. Wang, W. S. Shi, G. W. She, L. X. Mu, and S. T. Lee

Appl. Phys. Lett. 96, 053104 (2010); http://dx.doi.org/10.1063/1.3300837 (3 pages) | Cited 17 times

Online Publication Date: 1 February 2010

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A surface-enhanced Raman scattering (SERS) sensor made of Ag nanoparticles-coated Si nanowire (SiNW) arrays was fabricated for the quantitative detection of Carbaryl (an important nitrogen pesticide). H-terminated SiNWs were capable of reducing silver ions, leading to uniform deposition of silver nanoparticles on SiNW arrays. Such wire arrays exhibited a superior detection sensitivity of 10−17 M Rodamine 6G with high reproducibility. The sensor also enabled high sensitivity, reproducibility, and stability detection of Carbaryl. Significantly, the linear relation between the logarithmic concentrations and Raman peak intensities provided quantitative detection of Carbaryl.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
81.07.Vb Quantum wires
81.07.Gf Nanowires
78.68.+m Optical properties of surfaces
78.67.Uh Nanowires
78.30.-j Infrared and Raman spectra

Size-dependent recombination dynamics in ZnO nanowires

J. S. Reparaz, F. Güell, M. R. Wagner, A. Hoffmann, A. Cornet, and J. R. Morante

Appl. Phys. Lett. 96, 053105 (2010); http://dx.doi.org/10.1063/1.3294327 (3 pages) | Cited 12 times

Online Publication Date: 1 February 2010

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A deep understanding of the recombination dynamics of ZnO nanowires (NWs) is a natural step for a precise design of on-demand nanostructures based on this material system. In this work we investigate the influence of finite-size on the recombination dynamics of the neutral bound exciton around 3.365 eV for ZnO NWs with different diameters. We demonstrate that the lifetime of this excitonic transition decreases with increasing the surface-to-volume ratio due to a surface induced recombination process. Furthermore, we have observed two broad transitions around 3.341 and 3.314 eV, which were identified as surface states by studying the dependence of their life time and intensitiy with the NWs dimensions.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.25.+i Surface conductivity and carrier phenomena
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.-y Excitons and related phenomena
73.22.Lp Collective excitations

Nanoscale resistive memory with intrinsic diode characteristics and long endurance

Kuk-Hwan Kim, Sung Hyun Jo, Siddharth Gaba, and Wei Lu

Appl. Phys. Lett. 96, 053106 (2010); http://dx.doi.org/10.1063/1.3294625 (3 pages) | Cited 14 times

Online Publication Date: 1 February 2010

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We report studies on nanoscale resistive memory devices that exhibit diodelike I-V characteristics at on-state with reverse bias current suppressed to below 10−13 A and rectifying ratio >106. The intrinsic diodelike characteristics are robust during device operation and can survive >108 write/erase programming cycles. The devices can be programmed at reduced programming voltages compared to earlier studies without the initial high-voltage forming process. Multibit storage capability was also reported. The intrinsic diode characteristics provide a possible solution to suppress crosstalk in high-density crossbar memory or logic arrays particularly for those based on bipolar resistive switches (memristors).
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84.30.Sk Pulse and digital circuits
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.35.-p Nanoelectronic devices

Atomically-thin crystalline films and ribbons of bismuth telluride

Desalegne Teweldebrhan, Vivek Goyal, Muhammad Rahman, and Alexander A. Balandin

Appl. Phys. Lett. 96, 053107 (2010); http://dx.doi.org/10.1063/1.3280078 (3 pages) | Cited 44 times

Online Publication Date: 1 February 2010

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The authors report on “graphene-like” exfoliation of the large-area crystalline films and ribbons of bismuth telluride with the thicknesses of a few atoms. It is demonstrated that Bi2Te3 crystal can be mechanically separated into its building blocks—Te–Bi–Te–Bi–Te atomic fivefolds—with the thickness of ∼ 1 nm and even further—to subunits with smaller thicknesses. The atomically-thin films can be structured into suspended crystalline ribbons providing quantum confinement in two dimensions. The quasi two-dimensional crystals of bismuth telluride revealed high electrical conductivity and low thermal conductivity. The proposed atomic-layer engineering of bismuth telluride opens up a principally new route for drastic enhancement of the thermoelectric figure of merit.
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73.61.Le Other inorganic semiconductors
68.55.jd Thickness
73.50.Lw Thermoelectric effects
68.55.ag Semiconductors

Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time

Chaoyi Yan, Nandan Singh, and Pooi See Lee

Appl. Phys. Lett. 96, 053108 (2010); http://dx.doi.org/10.1063/1.3297905 (3 pages) | Cited 24 times

Online Publication Date: 2 February 2010

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Ultraviolet (UV) photodetectors based on ternary Zn2GeO4 nanowire (NW) networks are demonstrated. The devices show fast response and recovery time, which is attributed to the unique NW-NW junction barrier dominated conductance for network devices. The UV-light induced barrier height modulation is much faster than the oxygen adsorption/desorption processes. The wide-band gap Zn2GeO4 NWs also exhibit high wavelength selectivity for deep UV detection. We demonstrate that ternary oxide NW-networks are ideal building blocks for nanoscale photodetectors with superior performance and facile fabrication processes.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems

Tunable interfacial properties of epitaxial graphene on metal substrates

Min Gao, Yi Pan, Chendong Zhang, Hao Hu, Rong Yang, Hongliang Lu, Jinming Cai, Shixuan Du, Feng Liu, and H.-J. Gao

Appl. Phys. Lett. 96, 053109 (2010); http://dx.doi.org/10.1063/1.3309671 (3 pages) | Cited 18 times

Online Publication Date: 3 February 2010

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We report on tuning interfacial properties of epitaxially-grown graphenes with different kinds of metal substrates based on scanning tunneling microscopy experiments and density functional theory calculations. Three kinds of metal substrates, Ni(111), Pt(111), and Ru(0001), show different interactions with the epitaxially grown graphene at the interfaces. The different interfacial interaction making graphene n-type and p-type doped, leads to the polarity change of the thermoelectric property of the graphene/metal systems. These findings may give further insights to the interfacial interactions in the graphene/metal systems and promote the use of graphene-based heterostructures in devices.
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73.40.Ns Metal-nonmetal contacts
71.20.Tx Fullerenes and related materials; intercalation compounds
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
72.20.Pa Thermoelectric and thermomagnetic effects
73.50.Lw Thermoelectric effects
73.20.At Surface states, band structure, electron density of states

Maximum Li storage in Si nanowires for the high capacity three-dimensional Li-ion battery

Kibum Kang, Hyun-Seung Lee, Dong-Wook Han, Gil-Sung Kim, Donghun Lee, Geunhee Lee, Yong-Mook Kang, and Moon-Ho Jo

Appl. Phys. Lett. 96, 053110 (2010); http://dx.doi.org/10.1063/1.3299006 (3 pages) | Cited 37 times

Online Publication Date: 3 February 2010

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Nanowires can serve as three-dimensional platforms at the nanometer scale for highly efficient chemical energy storage and conversion vehicles, such as fuel cells and secondary batteries. Here we report a coin-type Si nanowire (NW) half-cell Li-ion battery showing the Li capacity of approximately 4000 mAh/g, which nearly approaches the theoretical limit of 4200 mAh/g, with very high Coulombic efficiency of up to 98%. Concomitantly, we provide direct evidence of reversible phase transitions in the Si NW anodes at the full electrochemical cycles, varying from pure Si to Li22Si5 phase, which has been known empirically inaccessible in the bulk limit.
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82.47.Aa Lithium-ion batteries
68.65.La Quantum wires (patterned in quantum wells)
84.60.-h Direct energy conversion and storage
88.30.G- Fuel cell systems

Realization of a phononic crystal operating at gigahertz frequencies

M. F. Su, R. H. Olsson, Z. C. Leseman, and I. El-Kady

Appl. Phys. Lett. 96, 053111 (2010); http://dx.doi.org/10.1063/1.3280376 (3 pages) | Cited 13 times

Online Publication Date: 4 February 2010

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We report on the experimental realization of a phononic crystal, designed to operate at gigahertz frequencies. Detailed studies of the structure have been performed using finite difference time domain method to determine effects of slab modes in finite-thickness slabs, thus enabling precise guidance of experimental efforts. In particular, we find the slab mode effects mitigated in ultrathin (thickness less than lattice periodicity) and ultrathick (thickness more than ten times lattice periodicity) slabs. Gigahertz-frequency phononic crystals are well poised to find usage as high-Q resonators, waveguides, and coupling elements in a variety of application areas including RF communications.
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63.20.dd Measurements

Direct investigation on conducting nanofilaments in single-crystalline Ni/NiO core/shell nanodisk arrays

Inrok Hwang, Jinsik Choi, Sahwan Hong, Jin-Soo Kim, Ik-Su Byun, Jae Ho Bahng, Ja-Yong Koo, Sung-Oong Kang, and Bae Ho Park

Appl. Phys. Lett. 96, 053112 (2010); http://dx.doi.org/10.1063/1.3301620 (3 pages) | Cited 8 times

Online Publication Date: 4 February 2010

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We report resistive switching characteristics of single-crystalline Ni/NiO core/shell nanodisk arrays, in which the conducting filaments are highly localized on the surface of nanostructure. The local current distributions observed in such a single-grained nanodisk demonstrate that the contact area and the contact time between the conductive tip of conducting atomic force microscopy and the surface of nanodisk critically influence the voltage-stress-induced electroforming behaviors of nanofilaments in NiO switching nanoblocks. These contact parameters, such as the contact area and the contact time, are interpreted to the electrode size and the voltage-stress time for the formation of filaments in metal oxides.
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73.63.Bd Nanocrystalline materials
81.10.Fq Growth from melts; zone melting and refining
82.45.-h Electrochemistry and electrophoresis
68.37.Ps Atomic force microscopy (AFM)
73.40.Cg Contact resistance, contact potential
81.07.Bc Nanocrystalline materials

Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dots

F. Klotz, V Jovanov, J. Kierig, E. C. Clark, D. Rudolph, D. Heiss, M. Bichler, G. Abstreiter, M. S. Brandt, and J. J. Finley

Appl. Phys. Lett. 96, 053113 (2010); http://dx.doi.org/10.1063/1.3309684 (3 pages) | Cited 3 times

Online Publication Date: 4 February 2010

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The electric field dependence of the exciton g factor and the fine structure splitting in self-assembled InGaAs/GaAs quantum dots grown via a flush-overgrowth technique is studied by photocurrent and photoluminescence experiments. Both the fine structure and the Zeeman splitting can be tuned over a wide range via electric fields applied in growth direction of the quantum dot. For the g factor, a tunability of 250% is demonstrated from g = 0.12 to 0.42.
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73.21.La Quantum dots
81.07.Ta Quantum dots
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
78.55.Hx Other solid inorganic materials
72.40.+w Photoconduction and photovoltaic effects

Ultrafast nanotube based diffusiophoresis nanomotors

Wei Liu, Rongxiang He, Hongwei Zhu, Hao Hu, Meiya Li, and Xing-zhong Zhao

Appl. Phys. Lett. 96, 053114 (2010); http://dx.doi.org/10.1063/1.3308480 (3 pages) | Cited 1 time

Online Publication Date: 5 February 2010

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Nanomotors represent a significant step forward in nanotechnology, and prove that nanotubes and other nanostructures several hundred times smaller than the diameter of a human hair can be manipulated and assembled into true devices. In this letter, nanotubes based nanomotors are reported. The nanomotors were observed to move at a velocity of ∼ 0.5 m/s, which is several orders of magnitude faster than current nanomotors. Concentration difference energy was thought to provide the main motive forces to drive these nanomotors. This phenomenon which is seldom observed at macroscopic scale, is common in microscale, and can be employed to explain some motions of nano- and microscale objects.
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85.35.Kt Nanotube devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.07.De Nanotubes
81.07.Oj Nanoelectromechanical systems (NEMS)

A translational nanoactuator based on carbon nanoscrolls on substrates

Xinghua Shi, Yuan Cheng, Nicola M. Pugno, and Huajian Gao

Appl. Phys. Lett. 96, 053115 (2010); http://dx.doi.org/10.1063/1.3302284 (3 pages) | Cited 10 times

Online Publication Date: 5 February 2010

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Inspired by recent experimental studies on the fabrication of carbon nanoscrolls (CNSs) on solid substrates, we perform theoretical study and molecular dynamics simulations to investigate the translational rolling/unrolling of a CNS on rigid substrate. We show that a substrate-supported CNS can be controlled to roll forward and backward by tuning its interlayer interaction energy via an external field. The typical energy release rate per unit area of rolling for such controllable and reversible linear motion is estimated to be in the range of (−0.06)–0.08 nN/nm, indicating promising applications as actuators and motors in nanomechanical systems.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.07.Tw Servo and control equipment; robots
07.10.Cm Micromechanical devices and systems

Negative differential resistance in GaN nanowire network

M. Dragoman, G. Konstantinidis, A. Cismaru, D. Vasilache, A. Dinescu, D. Dragoman, D. Neculoiu, R. Buiculescu, G. Deligeorgis, A. P. Vajpeyi, and A. Georgakilas

Appl. Phys. Lett. 96, 053116 (2010); http://dx.doi.org/10.1063/1.3309670 (3 pages) | Cited 4 times

Online Publication Date: 5 February 2010

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Negative differential resistance of gallium nitride nanowire networks deposited on an interdigitated electrode configuration patterned on a silicon dioxide/high resistivity Si substrate is experimentally demonstrated at room temperature. This effect is attributed to tunnelling between crossed gallium nitride nanowires.
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73.63.Nm Quantum wires
81.05.Ea III-V semiconductors
81.07.Vb Quantum wires
81.07.Gf Nanowires
72.20.Ht High-field and nonlinear effects

Selection and transfer of individual plasmon-resonant metal nanoparticles

Yoshito Tanaka and Keiji Sasaki

Appl. Phys. Lett. 96, 053117 (2010); http://dx.doi.org/10.1063/1.3304085 (3 pages) | Cited 2 times

Online Publication Date: 5 February 2010

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We present a simple method for selecting a single metal nanoparticle with desired localized surface plasmon (LSP) characteristics from particle ensembles on one surface and then transferring it to another surface. The LSP of individual nanoparticles is characterized using a microspectroscopy system. An atomic force microscope mounted on the optical microscope achieves particle capture and release with the chemically modified probe.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
07.79.Lh Atomic force microscopes
07.60.Pb Conventional optical microscopes

Interface induced band gap reduction and electron transfer in semiconducting carbon nanotube

M. Zubaer Hossain

Appl. Phys. Lett. 96, 053118 (2010); http://dx.doi.org/10.1063/1.3310018 (3 pages) | Cited 2 times

Online Publication Date: 5 February 2010

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Ab initio study of a carbon nanotube-SiO2 interface reveals that the energetic preference for the nanotube to bind on particular sites on the O-terminated surface differs substantially from that on the Si-terminated surface. Besides, the chemical reactivity at the interface leads to electron-transfer from the nanotube to the dielectric substrate, and distorts the nanotube’s homogeneous distribution of electrons. The interaction also initiates substantial reduction in the band gap of the nanotube, as it approaches the surface.
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71.20.Tx Fullerenes and related materials; intercalation compounds
71.15.-m Methods of electronic structure calculations
73.22.-f Electronic structure of nanoscale materials and related systems
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
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