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1 Feb 2010

Volume 96, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 96, 053107 (2010); http://dx.doi.org/10.1063/1.3280078 (3 pages)

Desalegne Teweldebrhan, Vivek Goyal, Muhammad Rahman, and Alexander A. Balandin
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Anisotropic relaxation and crystallographic tilt in BiFeO3 on miscut SrTiO3 (001)

Rebecca J. Sichel, Alexei Grigoriev, Dal-Hyun Do, Seung-Hyub Baek, Ho-Won Jang, Chad M. Folkman, Chang-Beom Eom, Zhonghou Cai, and Paul G. Evans

Appl. Phys. Lett. 96, 051901 (2010); http://dx.doi.org/10.1063/1.3299256 (3 pages) | Cited 2 times

Online Publication Date: 1 February 2010

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Epitaxial BiFeO3 thin films on miscut (001) SrTiO3 substrates relax via mechanisms leading to an average rotation of the crystallographic axes of the BiFeO3 layer with respect to the substrate. The angle of the rotation reaches a maximum in the plane defined by the surface normal of the film and the direction of the surface miscut. X-ray microdiffraction images show that each BiFeO3 mosaic block is rotated by a slightly different angle and contains multiple polarization domains. These effects lead to a complicated overall symmetry in BiFeO3 thin films. This relaxation mechanism can be extended to other complex oxides.
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68.55.-a Thin film structure and morphology
68.55.A- Nucleation and growth
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Acoustic band gaps in phononic crystal strip waveguides

Feng-Chia Hsu, Chiung-I Lee, Jin-Chen Hsu, Tsun-Che Huang, Chin-Hung Wang, and Pin Chang

Appl. Phys. Lett. 96, 051902 (2010); http://dx.doi.org/10.1063/1.3298643 (3 pages) | Cited 5 times

Online Publication Date: 1 February 2010

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We study the elastic wave propagation in phononic-crystal strip waveguides cut from a silicon phononic-crystal plate with square-lattice vacuum holes through analyzing the band structure and transmission spectra. We show the influence of different cutting ways is crucial to the band-gap formation, and four types of native strip modes are deserved to be fully taken into account. The results show that though there is no band gap existing in the phononic-crystal plates with a low filling fraction, band gaps are created in their corresponding cut strip waveguide because the derivative traction-free boundaries strongly modulate the shear-horizontal bands.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
43.20.Mv Waveguides, wave propagation in tubes and ducts

Mass density of individual cobalt nanowires

L. Philippe, B. Cousin, Zhao Wang, D. F. Zhang, and J. Michler

Appl. Phys. Lett. 96, 051903 (2010); http://dx.doi.org/10.1063/1.3299013 (3 pages) | Cited 1 time

Online Publication Date: 1 February 2010

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The mass density of nanowires is determined using in situ resonance frequency experiments combined with quasistatic nanotensile tests. Our results reveal an average mass density of 7.36 g/cm3, which is below the theoretical density of bulk cobalt. The results are discussed in terms of the measurement accuracy and the microstructure of the nanowires.
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61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.07.Gf Nanowires
61.72.-y Defects and impurities in crystals; microstructure
81.70.Bt Mechanical testing, impact tests, static and dynamic loads

Monolayer rigid arrays of cavity-controllable metallic mesoparticles: Electrochemical preparation and light transmission resonances

Zhuo Chen, Han Dong, Jian Pan, Peng Zhan, Chaojun Tang, and Zhen-Lin Wang

Appl. Phys. Lett. 96, 051904 (2010); http://dx.doi.org/10.1063/1.3300640 (3 pages) | Cited 4 times

Online Publication Date: 2 February 2010

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We report an efficient and robust electrochemical deposition method to fabricate large-scale two-dimensional rigid arrays of metal colloids with a precise control of the particle morphology by monitoring metal growth that is confined within a templated organic porous mold. Light transmission resonances through the metallic periodic microstructures are observed and the resonance wavelengths are found to depend on the morphology of the scattering elements. Further numerical simulations confirm these transmission resonances and reveal that they are attributed to the excitations of localized or propagating surface plasmon modes supported by the specific structures. The present method of tailoring metallic microstructures could find applications in plasmonics.
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81.15.Pq Electrodeposition, electroplating
82.45.Mp Thin layers, films, monolayers, membranes
68.55.A- Nucleation and growth
78.66.Bz Metals and metallic alloys
73.22.Lp Collective excitations
82.45.Qr Electrodeposition and electrodissolution

Tadpole shaped Ge0.96Mn0.04 magnetic semiconductors grown on Si

Yong Wang, Faxian Xiu, Jin Zou, Kang L. Wang, and Ajey P. Jacob

Appl. Phys. Lett. 96, 051905 (2010); http://dx.doi.org/10.1063/1.3297880 (3 pages) | Cited 7 times

Online Publication Date: 3 February 2010

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Magnetic and structural properties of a Ge0.96Mn0.04 thin film grown on Si has been investigated by transmission electron microscopy and superconducting quantum interference device. Tadpole shaped coherent GeMn clusters induced by spinodal decomposition were revealed in the film. Although these coherent clusters are dominant, Mn5Ge3 precipitates can be still detectable, contributing to a complex ferromagnetism. The Ge buffer layer, by relieving the misfit strain between Si and Ge, can significantly reduce the density of lattice defects in the subsequent GeMn layer. Our findings unveil a particular morphology of GeMn clusters, which would contribute to better understand the GeMn system.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
72.25.-b Spin polarized transport
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors

Effect of boron on interstitial-related luminescence centers in silicon

S. Charnvanichborikarn, B. J. Villis, B. C. Johnson, J. Wong-Leung, J. C. McCallum, J. S. Williams, and C. Jagadish

Appl. Phys. Lett. 96, 051906 (2010); http://dx.doi.org/10.1063/1.3300836 (3 pages) | Cited 2 times

Online Publication Date: 3 February 2010

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Photoluminescence measurements have been used to investigate the optically active defect centers formed by silicon implantation and a subsequent anneal at 275, 400, or 525 °C. The presence of boron in p-type silicon is found to produce deleterious effects on the luminescence of the interstitial-related W- and X-centers as well as a lower energy broad luminescence band. This effect has not been previously reported but it is consistent with the suppression of interstitial-related {311} extended defect formation in the presence of high boron concentrations at higher annealing temperatures. The results presented in this letter provide insight into the role of boron in the initial stages of interstitial cluster formation.
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78.55.Ap Elemental semiconductors
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
61.72.jj Interstitials
61.72.Cc Kinetics of defect formation and annealing

Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN

Shaoqiang Chen, Akira Uedono, Shoji Ishibashi, Shigeo Tomita, Hiroshi Kudo, and Katsuhiro Akimoto

Appl. Phys. Lett. 96, 051907 (2010); http://dx.doi.org/10.1063/1.3306736 (3 pages)

Online Publication Date: 4 February 2010

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Erbium-doped GaN samples grown with different V/III ratios through gas source molecular beam epitaxy were prepared to investigate the influence of the V/III ratio on the defect formation and the optical activity of the Er-related luminescence center. Obvious V/III ratio dependence was observed in photoluminescence measurement. Positron annihilation spectroscopy measurements suggested that VGa-VN vacancy-complexes formed in these samples and that the VN/VGa ratio depended on the V/III ratio. The generation of Er-VN defect complexes, which act as high optical active luminescence centers, is suggested as the cause of improved optical properties of Er-doped GaN grown with a lower V/III ratio.
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78.66.Fd III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.jd Vacancies
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors

Structural and electrical properties of ZnO nanorods and Ti buffer layers

C.-H. Kwak, B.-H. Kim, C.-I. Park, S.-Y. Seo, S.-H. Kim, and S.-W. Han

Appl. Phys. Lett. 96, 051908 (2010); http://dx.doi.org/10.1063/1.3308498 (3 pages) | Cited 3 times

Online Publication Date: 4 February 2010

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Vertically-well-aligned ZnO nanorods were synthesized on Ti buffer layers by a metal-organic chemical-vapor deposition process. Structural analyses demonstrated that the ZnO nanorods were well-aligned in the c-axis and ab-plane. Transmission electron microscopy (TEM) showed that the Ti buffer layer was amorphous and interdiffused into the ZnO nanorods. Energy-dispersive spectroscopy (EDS) analysis revealed the Ti buffer layers to be slightly oxide. Extended x-ray absorption fine structure confirmed the TEM and EDS results. The I-V characteristic measurements showed a 20-fold increase in current density with the Ti buffer layer, suggesting excellent electrical contact between the Ti buffer layer and ZnO nanorods.
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73.63.Bd Nanocrystalline materials
78.70.Dm X-ray absorption spectra
81.05.Dz II-VI semiconductors
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

The absorption spectrum of hydrogenated silicon carbide nanocrystals from ab initio calculations

Márton Vörös, Péter Deák, Thomas Frauenheim, and Adam Gali

Appl. Phys. Lett. 96, 051909 (2010); http://dx.doi.org/10.1063/1.3308495 (3 pages) | Cited 9 times

Online Publication Date: 5 February 2010

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The electronic structure and absorption spectrum of hydrogenated silicon carbide nanocrystals (SiC NCs) have been determined by first principles calculations. We show that the reconstructed surface can significantly change not just the onset of absorption but the shape of the spectrum at higher energies. We compare our results with two recent experiments on ultrasmall SiC NCs.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
73.22.-f Electronic structure of nanoscale materials and related systems
71.15.-m Methods of electronic structure calculations

Calibrating the single-wall carbon nanotube resonance Raman intensity by high resolution transmission electron microscopy for a spectroscopy-based diameter distribution determination

P. B. C. Pesce, P. T. Araujo, P. Nikolaev, S. K. Doorn, K. Hata, R. Saito, M. S. Dresselhaus, and A. Jorio

Appl. Phys. Lett. 96, 051910 (2010); http://dx.doi.org/10.1063/1.3297904 (3 pages) | Cited 5 times

Online Publication Date: 5 February 2010

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We study a single-wall carbon nanotube (SWNT) sample grown by water-assisted chemical vapor deposition with both resonance Raman scattering (RRS) and high resolution transmission electron microscopy. High resolution transmission electron microscopy measurements of 395 SWNTs determined the diameter distribution of the sample, allowing us to calibrate an RRS radial breathing mode (RBM) map obtained with 51 laser excitation energies from 1.26 to 1.73 eV. Thus, we determined the diameter dependence of the RRS RBM cross-section, which in turn allows the determination of the diameter distribution of any SWNT sample by measuring the RBM Raman signal.
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81.07.De Nanotubes
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
78.30.Na Fullerenes and related materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

M.-I. Richard, M. J. Highland, T. T. Fister, A. Munkholm, J. Mei, S. K. Streiffer, Carol Thompson, P. H. Fuoss, and G. B. Stephenson

Appl. Phys. Lett. 96, 051911 (2010); http://dx.doi.org/10.1063/1.3293441 (3 pages) | Cited 8 times

Online Publication Date: 5 February 2010

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Composition and strain inhomogeneities strongly affect the optoelectronic properties of InGaN but their origin has been unclear. Here we report real-time x-ray reciprocal space mapping that reveals the development of strain and composition distributions during metal-organic chemical vapor deposition of InxGa1−xN on GaN. Strong, correlated inhomogeneities of the strain state and In fraction x arise during growth in a manner consistent with models for instabilities driven by strain relaxation.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Surface changes on AlH3 during the hydrogen desorption

Shunsuke Kato, Michael Bielmann, Kazutaka Ikeda, Shin-ichi Orimo, Andreas Borgschulte, and Andreas Züttel

Appl. Phys. Lett. 96, 051912 (2010); http://dx.doi.org/10.1063/1.3269598 (3 pages) | Cited 14 times

Online Publication Date: 5 February 2010

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Surface change of α-AlH3 during the hydrogen desorption was investigated by means of in situ x-ray photoelectron spectroscopy combined with thermal desorption spectroscopy. The surface of AlH3 covered by an oxide layer significantly changes upon hydrogen desorption and the hydrogen desorption rate increases remarkably. In this study, the role of the surface oxide layer on AlH3 in view of the hydrogen desorption kinetics was investigated. AlH3 only decomposes into Al and H2 at the free surface and not in the bulk. Therefore, a closed surface oxide layer prevents the thermodynamically unstable AlH3 from decomposition.
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68.43.Vx Thermal desorption
68.35.bt Other materials
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
79.60.Dp Adsorbed layers and thin films

Herringbone buckling patterns of anisotropic thin films on elastomeric substrates

J. Song

Appl. Phys. Lett. 96, 051913 (2010); http://dx.doi.org/10.1063/1.3309696 (3 pages) | Cited 1 time

Online Publication Date: 5 February 2010

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Highly ordered herringbone buckling patterns have been observed in stiff thin films on elastomeric substrates under an equibiaxial compression. Existing mechanics models assume the thin film to be isotropic, which does not agree with recent experiments of single crystal thin films (e.g., silicon) on elastomeric substrates, where the film has cubic symmetry with anisotropic material properties. A theoretical model for herringbone buckling patterns of anisotropic thin films on elastomeric substrates is developed in this paper. The prediction of the buckling directions agrees well with experiments. The approximation of the use of isotropic material properties is also analyzed.
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62.20.mq Buckling
61.41.+e Polymers, elastomers, and plastics
68.60.Bs Mechanical and acoustical properties
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