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Applied Physics Letters / Volume 96 / Issue 7 / MAGNETISM AND SUPERCONDUCTIVITY

Appl. Phys. Lett. 96, 072505 (2010); http://dx.doi.org/10.1063/1.3309703 (3 pages)

Reducing quantum-regime dielectric loss of silicon nitride for superconducting quantum circuits

Hanhee Paik and Kevin D. Osborn

Laboratory for Physical Sciences, College Park, Maryland 20740, USA

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(Received 11 November 2009; accepted 16 January 2010; published online 17 February 2010)

The loss of amorphous hydrogenated silicon nitride (a-SiNx:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system defect model. Each a-SiNx:H film was deposited with different concentrations of hydrogen impurities. We find that quantum-regime dielectric loss tangent tan δ0 in a-SiNx:H is strongly correlated with N–H impurities, including NH2. By slightly reducing x we are able to reduce tan δ0 by approximately a factor of 50, where the best films show tan δ0 ≃ 3×10−5.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

amorphous state, dielectric losses, dielectric thin films, hydrogen, impurities, silicon compounds

PACS

  • 77.22.Gm

    Dielectric loss and relaxation

  • 77.84.Bw

    Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

  • 77.55.-g

    Dielectric thin films

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3309703

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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