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Applied Physics Letters / Volume 96 / Issue 7 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 073114 (2010); http://dx.doi.org/10.1063/1.3318256 (3 pages)

Asymmetry and shape transitions of epitaxially strained islands on vicinal surfaces

B. J. Spencer1 and J. Tersoff2

1Department of Mathematics, State University of New York at Buffalo, Buffalo, New York 14260-2900, USA
2IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598, USA

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(Received 23 November 2009; accepted 22 January 2010; published online 19 February 2010)

We calculate the shapes of epitaxially strained islands on vicinal substrates, within a fully facetted, two-dimensional model. For nonzero miscut, islands first form as asymmetric “half-pyramid” shapes, with no nucleation barrier even in a fully facetted system. As islands grow, they change shape through a series of first-order transitions. The substrate miscut determines what island types occur in the growth sequence; sufficiently large miscut can stabilize qualitatively asymmetric shapes such as “half domes.” Our results are summarized in a phase diagram of shape versus island volume and miscut. The results are consistent with available experiments for Ge on Si.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

elemental semiconductors, germanium, island structure, nucleation, semiconductor epitaxial layers, substrates, surface phase transformations

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3318256

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    J. Tersoff and R. M. Tromp, Phys. Rev. Lett. 70, 2782 (1993).

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