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15 Feb 2010

Volume 96, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 96, 072501 (2010); http://dx.doi.org/10.1063/1.3314301 (3 pages)

T. Hesjedal and T. Phung
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Influence of crystal phases on electro-optic properties of epitaxially grown lanthanum-modified lead zirconate titanate films

Shin Masuda, Atsushi Seki, and Yoichiro Masuda

Appl. Phys. Lett. 96, 072901 (2010); http://dx.doi.org/10.1063/1.3308506 (3 pages) | Cited 6 times

Online Publication Date: 16 February 2010

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We describe here how we have improved the crystal qualities and controlled the crystal phase of the lanthanum-modified lead zirconate titanate (PLZT) film without changing the composition ratio using an oxygen-pressure crystallization process. A PLZT film deposited on a SrTiO3 substrate with the largest electro-optic (EO) coefficient of 498 pm/V has been achieved by controlling the crystal phase of the film. Additionally, a fatigue-free lead zirconate titanate (PZT) capacitor with platinum electrodes has been realized by reducing the oxygen vacancies in the films.
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78.20.Jq Electro-optical effects
77.80.-e Ferroelectricity and antiferroelectricity
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
61.66.Fn Inorganic compounds
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
61.72.jd Vacancies

Stress impact on dielectric properties of Bi3.15Nd0.85Ti3O12 films

Yunfei Liu, Yi Kan, Xiaomei Lu, Wei Cai, Xiaobo Wu, Xiumei Wu, Xiaofei Wang, HuiFeng Bo, Fengzhen Huang, and Jinsong Zhu

Appl. Phys. Lett. 96, 072902 (2010); http://dx.doi.org/10.1063/1.3302460 (3 pages)

Online Publication Date: 16 February 2010

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Dielectric properties of Bi3.15Nd0.85Ti3O12 films under applied uniaxial stress were investigated. The results showed that the dielectric constant and loss increased with the stress changing from maximum compression (−70 MPa) to maximum tension (+70 MPa). Further studies discovered that the variation of the dielectric constant under stress was more distinct at higher testing ac field and ambient temperature. These observations were explained based on the domain wall movability related with the stress-induced domain reorientation.
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77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis

Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates

Apurba Laha, A. Fissel, and H. J. Osten

Appl. Phys. Lett. 96, 072903 (2010); http://dx.doi.org/10.1063/1.3318260 (3 pages) | Cited 4 times

Online Publication Date: 19 February 2010

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The incorporation of few monolayers of Ge chemisorbed on Si surface has been found to have significant impact on the electrical properties of crystalline Gd2O3 grown epitaxially on Si substrates. Although the Ge coverage on Si surface does not show any influence on the epitaxial quality of Gd2O3 layers, however, it exhibits a strong impact on their electrical properties. We show that by incorporating few monolayers of Ge at the interface between Gd2O3 and Si, the capacitance-voltage characteristics, fixed charge and density of interface traps of Pt/Gd2O3/Si capacitor are much superior to those layers grown on clean Si surfaces.
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73.61.Le Other inorganic semiconductors
73.20.-r Electron states at surfaces and interfaces
81.65.Rv Passivation

Magnetic effects on dielectric and polarization behavior of multiferroic heterostructures

Sandra Dussan, Ashok Kumar, J. F. Scott, and Ram S. Katiyar

Appl. Phys. Lett. 96, 072904 (2010); http://dx.doi.org/10.1063/1.3327889 (3 pages) | Cited 14 times

Online Publication Date: 19 February 2010

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PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3(PZT/LSMO) bilayer with surface roughness ∼ 1.8 nm thin films have been grown by pulsed laser deposition on LaAlO3(LAO) substrates. High remnant polarization (30–54 μC/cm2), dielectric constant (400–1700), and well saturated magnetization were observed depending upon the deposition temperature of the ferromagnetic layer and applied frequencies. Giant frequency-dependent change in dielectric constant and loss were observed above the ferromagnetic-paramagnetic temperature. The frequency dependent dielectric anomalies are attributed to the change in metallic and magnetic nature of LSMO and also the interfacial effect across the bilayer; an enhanced magnetoelectric interaction may be due to the Parish–Littlewood mechanism of inhomogeneity near the metal-dielectric interface.
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77.55.Nv Multiferroic/magnetoelectric films
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
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