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15 Feb 2010

Volume 96, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 96, 072501 (2010); http://dx.doi.org/10.1063/1.3314301 (3 pages)

T. Hesjedal and T. Phung
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Very high open-circuit voltage ultraviolet photovoltaic diode with its application in optical encoder field

Guang Zhang, Wenlian Li, Bei Chu, Fei Yan, Jianzhuo Zhu, and Yiren Chen

Appl. Phys. Lett. 96, 073301 (2010); http://dx.doi.org/10.1063/1.3318438 (3 pages) | Cited 1 time

Online Publication Date: 17 February 2010

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We demonstrate a very high voltage based organic photovoltaic (PV) diode by stacking two ultraviolet (UV) sensitized organic PV diodes. It shows an open-circuit voltage (Voc) of 4.34 V under 365 nm UV irradiation with intensity of 2 mW/cm2. Due to the especially high Voc the PV diode device could be integrated in electronic logic device, as a result a high or a low potential states can be harvested directly under the UV irradiation or not, respectively. The difference between high and low potential states is great and the temporal response is fast, which make it an attractive and promising candidate in application of optical encoder.
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85.60.Dw Photodiodes; phototransistors; photoresistors
84.30.Sk Pulse and digital circuits
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Determination of molecular dipole orientation in doped fluorescent organic thin films by photoluminescence measurements

Jörg Frischeisen, Daisuke Yokoyama, Chihaya Adachi, and Wolfgang Brütting

Appl. Phys. Lett. 96, 073302 (2010); http://dx.doi.org/10.1063/1.3309705 (3 pages) | Cited 19 times

Online Publication Date: 17 February 2010

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The orientation of the transition dipole moments of fluorescent organic molecules doped into a matrix material is determined by photoluminescence measurements of the angular dependent emission spectra and by comparison with simulations. The analysis of two small molecular materials doped into a 4,4′-bis(N-carbazole)-biphenyl matrix is demonstrated, yielding a horizontal orientation of 91% for 4,4′-bis[4-(diphenylamino)styryl]biphenyl and a completely random orientation in case of tris-(8-hydroxyquinoline)aluminum (Alq3). This expeditious technique does not require detailed information about the optical properties of the dopant, making this method particularly suitable for characterizing newly developed materials for organic light-emitting diodes with enhanced light-outcoupling efficiency.
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78.55.Kz Solid organic materials
61.72.up Other materials
85.60.Jb Light-emitting devices
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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Balanced charge transport and enhanced white electroluminescence from a single white emissive polymer via thermal annealing

Xiaodi Niu, Baohua Zhang, Zhiyuan Xie, Yanxiang Cheng, and Lixiang Wang

Appl. Phys. Lett. 96, 073303 (2010); http://dx.doi.org/10.1063/1.3323099 (3 pages) | Cited 2 times

Online Publication Date: 18 February 2010

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The effect of thermal annealing on electroluminescence of polyfluorene-based single white emissive polymer is demonstrated. Both color purity and light-emitting efficiency of the devices are enhanced via thermal annealing. It is found that thermal annealing can induce the formation of crystalline polyfluorene phase that acts as an efficient blue fluorescent dopant for enhancing blue emission and hence color purity of the white light. Most importantly, the hole and electron transport is balanced after thermal annealing that favors improving the light-emitting efficiency. A light-emitting efficiency of 10 cd/A is achieved after thermal annealing, about 30% increase compared to the as-produced device.
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78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
81.40.Gh Other heat and thermomechanical treatments
73.50.-h Electronic transport phenomena in thin films
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Energy level evolution of molybdenum trioxide interlayer between indium tin oxide and organic semiconductor

Irfan, Huanjun Ding, Yongli Gao, Do Young Kim, Jegadesan Subbiah, and Franky So

Appl. Phys. Lett. 96, 073304 (2010); http://dx.doi.org/10.1063/1.3309600 (3 pages) | Cited 31 times

Online Publication Date: 19 February 2010

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The thickness dependance of molybdenum trioxide (MoO3) interlayer between conducting indium tin oxide (ITO) and chloro-aluminum pthalocyanine (AlPc-Cl) has been investigated with ultraviolet photoemission spectroscopy (UPS) and inverse photoemission spectroscopy. It was found that the MoO3 interlayer substantially increased the surface workfunction (WF). The increase was observed to saturate at 20 Å of MoO3 coverage. The increased WF results in hole accumulation and a band-bendinglike situation in the subsequently deposited AlPc-Cl. From these observations, a possible explanation is deduced for the observed reduction in series resistance by the insertion of the MoO3 insulating layer.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces
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