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Applied Physics Letters / Volume 96 / Issue 8 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 082112 (2010); doi:10.1063/1.3334683 (3 pages)

Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap

Miguel Rubio-Roy1, Farhana Zaman2, Yike Hu1, Claire Berger1, Michael W. Moseley2, James D. Meindl2, and Walt A. de Heer1

1School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
2School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

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(Received 2 December 2009; accepted 2 February 2010; published online 25 February 2010)

Electronic quality epitaxial graphene has been selectively grown on silicon carbide capped with a patterned aluminum nitride layer, providing a pathway to produce device structures that avoid lithographic patterning of graphene itself. Patterning of the cap exposes SiC where graphene will grow. Capped areas inhibit graphene growth and withstand graphitization temperatures up to 1420°C under 100 Pa of argon pressure. Graphene Hall bars were fabricated and characterized by scanning Raman spectroscopy, ellipsometry, and transport measurements. Hall-mobility is about 600 cm2/V s and can be further enhanced by fine tuning the argon pressure and improving the quality of SiC surface prior to graphitization.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

ellipsometry, epitaxial growth, graphene, graphitisation, Hall mobility, Raman spectra, silicon compounds

PACS

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 72.20.My

    Galvanomagnetic and other magnetotransport effects

  • 78.30.Hv

    Other nonmetallic inorganics

  • 81.05.ue

    Graphene

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.3334683

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

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