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Applied Physics Letters / Volume 96 / Issue 9 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 091101 (2010); http://dx.doi.org/10.1063/1.3332587 (3 pages)

Enhanced terahertz emission from a multilayered low temperature grown GaAs structure

Samir Rihani1, Richard Faulks1, Harvey E. Beere1, Ian Farrer1, Michael Evans2, David A. Ritchie1, and Michael Pepper1,2

1Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
2TeraView Ltd., Cambridge CB4 0WS, United Kingdom

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(Received 2 December 2009; accepted 3 February 2010; published online 1 March 2010)

We report the use of a multilayered structure comprising of alternating layers of low temperature grown GaAs and high temperature grown AlAs, as a terahertz (THz) photoconductive antenna emitter and receiver. Devices based on 10×10 μm2 mesa defined photoconductive gaps were fabricated on the multilayered structure, and a comparison made to conventional planar devices. The mesa defined photoconductive antennas allowed successive contact through the multilayered structure, which resulted in an increase in THz emission power and detection responsivity with increasing number of layers in contact with the antenna electrodes. A comparison with a conventional single layered device, processed in an identical mesa geometry, confirmed that the enhancement in THz emission is solely due to the multilayered nature of the device, whereas the improved receiver performance can be partially attributed to the mesa geometry.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

antennas, gallium arsenide, III-V semiconductors, multilayers, photoconducting devices

PACS

  • 85.60.-q

    Optoelectronic devices

  • 84.40.Ba

    Antennas: theory, components and accessories

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3332587

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    I. S. Gregory, C. M. Tey, A. G. Cullis, M. J. Evans, H. E. Beere, and I. Farrer, Phys. Rev. B 73, 195201 (2006).

    J. E. Bjarnason, T. L. J. Chan, A. W. M. Lee, E. R. Brown, D. C. Driscoll, M. Hanson, A. C. Gossard, and R. E. Muller, Appl. Phys. Lett. 85, 3983 (2004)APPLAB000085000018003983000001.

    E. A. Michael, B. Vowinkel, R. Schieder, M. Mikulics, M. Marso, and P. Kordos, Appl. Phys. Lett. 86, 111120 (2005)APPLAB000086000011111120000001.

    M. Mikulics, E. A. Michael, R. Schieder, J. Stutzki, R. Güsten, M. Marso, A. van der Hart, H. P. Bochem, H. Lüth, and P. Kordos, Appl. Phys. Lett. 88, 041118 (2006)APPLAB000088000004041118000001.

    S. Rihani, R. Faulks, H. Beere, H. Page, I. Gregory, M. Evans, D. A. Ritchie, and M. Pepper, Appl. Phys. Lett. 95, 051106 (2009)APPLAB000095000005051106000001.


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