APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 9 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 091104 (2010); http://dx.doi.org/10.1063/1.3340939 (3 pages)

Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer

Kyu Sang Kim1, Jin Ha Kim1, Su Jin Jung1, Yong Jo Park1, and S. N. Cho2

1LED Laboratory, Samsung LED, 314, Maetan3-Dong, Yeongtong-Gu, Suwon, Kyunggi-Do 443-743, Republic of Korea
2Micro Systems Laboratory, Samsung Advanced Institute of Technology, Mt. 14-1 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-712, Republic of Korea

View MapView Map

(Received 18 January 2010; accepted 8 February 2010; published online 3 March 2010)

P-type AlGaN/GaN/InGaN superlattices were incorporated in a InGaN based blue light emitting diode as electron blocking layer to minimize the temperature dependence on optical output power. For the characteristic temperatures in range of 10 to 100 °C and at operation current of 350 mA, the external quantum efficiency varied by less than 0.5%. For the presented device, the negative characteristic temperature was shown to occur below temperature of 50 °C. The improved temperature stability in optical output power is thought to be attributed to (1) the efficiency of hole carrier transport in AlGaN/GaN/InGaN superlattices and (2) the enhanced blocking of electron overflow between multiple quantum wells and AlGaN/GaN/InGaN superlattices.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

aluminium compounds, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, semiconductor quantum wells, semiconductor superlattices, wide band gap semiconductors

PACS

  • 85.60.Jb

    Light-emitting devices

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3340939

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 91, 183507 (2007)APPLAB000091000018183507000001.

    Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Kramers, Appl. Phys. Lett. 91, 141101 (2007)APPLAB000091000014141101000001.

    X. Ni, Q. Fan, R. Shimada, U. Ozgur, and H. Morkoc, Appl. Phys. Lett. 93, 171113 (2008)APPLAB000093000017171113000001.

    P. Kozodoy, M. Hansen, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 74, 3681 (1999)APPLAB000074000024003681000001.

    E. L. Waldron, J. W. Graff, and E. F. Schubert, Appl. Phys. Lett. 79, 2737 (2001)APPLAB000079000017002737000001.

    M. Z. Kauser, A. Osinsky, A. M. Dabiran, and P. P. Chow, Appl. Phys. Lett. 85, 5275 (2004)APPLAB000085000022005275000001.

    C. -F. Lin, Y. -S. Su, D. -K. Yu, C. -H. Wu, and B. -R. Wu, Appl. Phys. Lett. 82, 3403 (2003)APPLAB000082000020003403000001.

    H. Y. Ryu, K. H. Ha, S. N. Lee, T. Jang, H. K. Kim, J. H. Chae, K. S. Kim, K. K. Choi, J. K. Son, H. S. Paek, Y. J. Sung, T. Sakong, O. H. Nam, and Y. J. Park, Appl. Phys. Lett. 89, 031122 (2006)APPLAB000089000003031122000001.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer
  2. Transient thermoreflectance imaging of active photonic crystals
  3. Hard x-ray nanobeam characterization by coherent diffraction microscopy
  4. Enhanced terahertz emission from a multilayered low temperature grown GaAs structure
  5. Ring cavity induced threshold reduction in single-mode surface emitting quantum cascade lasers
Go to AIP Home
Copyright © American Institute of Physics
close