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Appl. Phys. Lett. 96, 091105 (2010); http://dx.doi.org/10.1063/1.3352048 (3 pages)

Competitiveness between direct and indirect radiative transitions of Ge

T.-H. Cheng1, C.-Y. Ko2, C.-Y. Chen2, K.-L. Peng2, G.-L. Luo3, C. W. Liu1,2,3, and H.-H. Tseng4

1Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China
2Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, Republic of China
3National Nano Device Laboratory, Hsinchu 30078, Taiwan, Republic of China
4Ingram School of Engineering, Texas State University, San Marcos, Texas 78666, USA

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(Received 7 December 2009; accepted 12 February 2010; published online 4 March 2010)

Both direct and indirect transitions of photoluminescence and electroluminescence are observed in a Ge n+p diode. The relative intensity of direct radiative recombination with respect to indirect radiative recombination increases with the increase in the optical pumping power, injection current density, and temperature. The increase in electron population in the direct valley is responsible for the enhancement. The spectra can be fitted by the combination of direct and indirect transition models. The direct radiative transition rate is ∼ 1600 times of the indirect transition, estimated by electroluminescence and photoluminescence spectra near room temperature.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.55.Ap

    Elemental semiconductors

  • 78.60.Fi

    Electroluminescence

  • 85.30.Kk

    Junction diodes

  • 73.40.Lq

    Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    H. Presting, T. Zinke, A. Splett, H. Kibbel, and M. Jaros, Appl. Phys. Lett. 69, 2376 (1996)APPLAB000069000016002376000001.

    C. W. Liu, M. H. Lee, M. -J. Chen, I. C. Chen, and C. -F. Lin, Appl. Phys. Lett. 76, 1516 (2000)APPLAB000076000012001516000001.

    J. C. Sturm, H. Manoharan, L. C. Lenchyshyn, M. L. Thewalt, N. L. Rowell, J. -P. Noël, and D. C. Houghton, Phys. Rev. Lett. 66, 1362 (1991).

    X. Sun, J. Liu, L. C. Kimerling, and J. Michel, Appl. Phys. Lett. 95, 011911 (2009)APPLAB000095000001011911000001.

    W. Hu, B. Cheng, C. Xue, H. Xue, S. Su, A. Bai, L. Luo, Y. Yu, and Q. Wang, Appl. Phys. Lett. 95, 092102 (2009)APPLAB000095000009092102000001.

    M. H. Liao, T. -H. Cheng, and C. W. Liu, Appl. Phys. Lett. 89, 261913 (2006)APPLAB000089000026261913000001.

    M. El Kurdi, T. Kociniewski, T. -P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, Appl. Phys. Lett. 94, 191107 (2009)APPLAB000094000019191107000001.


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