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Applied Physics Letters / Volume 96 / Issue 9 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 96, 091901 (2010); http://dx.doi.org/10.1063/1.3337090 (3 pages)

An efficient, simple, and precise way to map strain with nanometer resolution in semiconductor devices

Christoph T. Koch, V. Burak Özdöl, and Peter A. van Aken

Max Planck Institute for Metals Research, D-70569 Stuttgart, Germany

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(Received 14 January 2010; accepted 5 February 2010; published online 1 March 2010)

We report on the development of the dark-field inline electron holography technique and its application to map strain in technologically relevant structures, using as an example the strain-engineered gate channel in a 45 nm metal-oxide semiconductor field-effect transistor structure. We show that this technique combines a large field of view of several micrometers with high precision (better than 0.01%), high spatial resolution (better than 1 nm), and very loose experimental requirements not possible with any other technique currently available.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electron holography, MOSFET, nanotechnology

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3337090

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vickers, and C. J. Humphreys, Appl. Phys. Lett. 83, 5419 (2003)APPLAB000083000026005419000001.

    P. Zhang, A. A. Istratov, E. R. Weber, C. Kisielowski, H. He, C. Nelson, and J. C. H. Spence, Appl. Phys. Lett. 89, 161907 (2006)APPLAB000089000016161907000001.


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