Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing

Liu, H. F.; Chua, S. J.

doi:doi:10.1063/1.3337099

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An efficient, simple, and precise way to map strain with nanometer resolution in semiconductor devices

We report on the development of the dark-field inline electron holography technique and its application to map strain in technologically relevant structures, using as an example the strain-engineered gate channel in a 45 nm metal-oxide semiconductor field-effect transistor structure. We show that this technique combines a large field of view of several micrometers with high precision (better than 0.01%), high spatial resolution (better than 1 nm), and very loose experimental requirements not po...

Observation of space charge limited current by Cu ion drift in porous low-k/Cu interconnects

This letter reports the observation of the space charge limited current (SCLC) induced by injection and drift of Cu ions into porous low-k dielectrics. The SCLC, characterized by the momentary rise and fall of current with time, is found in all Cu interconnects having defective Ta barrier while it is absent in interconnects with intact barrier. This observation, combined with existing model on SCLC, leads to the conclusion that Cu ions can be injected through defects in Ta barrier and drift und...

Effects of phosphorus concentration, [P], and postgrowth annealing on the x-ray diffraction and Raman scattering from ZnO:P thin films are presented. The ZnO (0002) diffraction peak exhibits a large monotonic angular shift with increasing [P] up to 5.1×10¹⁹ cm⁻³ while its shift upon annealing is dependent on [P]. No extrinsic phases were detected for the samples studied. Raman spectra reveal disorder-activated vibrational modes, around 276, 510, 582, and 643 cm⁻¹, with increasing [P]. They also reveal local vibrational modes corresponding to P_O ( ∼ 370 cm⁻¹) and P_Zn ( ∼ 482 cm⁻¹) upon annealing. The intensity evolution of the Raman features, together with the x-ray diffraction results, indicates that phosphorus substituting for zinc is favored at low annealing temperatures while increasing annealing temperature tends to convert phosphorus doping configurations from P_Zn to P_O.

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KEYWORDS and PACS

Keywords

annealing, doping profiles, II-VI semiconductors, phosphorus, Raman spectra, semiconductor doping, semiconductor growth, semiconductor thin films, vibrational modes, X-ray diffraction, zinc compounds

PACS

61.72.uj

III-V and II-VI semiconductors
78.66.Hf

II-VI semiconductors
81.05.Dz

II-VI semiconductors
68.55.ag

Semiconductors
78.30.Fs

III-V and II-VI semiconductors
61.72.Cc

Kinetics of defect formation and annealing

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3337099

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

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