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Appl. Phys. Lett. 96, 091903 (2010); http://dx.doi.org/10.1063/1.3337102 (3 pages)

Observation of space charge limited current by Cu ion drift in porous low-k/Cu interconnects

L. S. Chen1, W. H. Bang1, Young-Joon Park2, E. Todd Ryan3, Sean King4, and Choong-Un Kim1

1Department of Materials Science and Engineering, The University of Texas at Arlington, Arlington, Texas 76019, USA
2Texas Instruments Inc., 13121 TI Boulevard, MS 366, Dallas, Texas 75243, USA
3GLOBALFOUNDRIES, 255 Fuller Rd., Albany, New York 12203, USA
4Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124, USA

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(Received 25 October 2009; accepted 2 February 2010; published online 1 March 2010)

This letter reports the observation of the space charge limited current (SCLC) induced by injection and drift of Cu ions into porous low-k dielectrics. The SCLC, characterized by the momentary rise and fall of current with time, is found in all Cu interconnects having defective Ta barrier while it is absent in interconnects with intact barrier. This observation, combined with existing model on SCLC, leads to the conclusion that Cu ions can be injected through defects in Ta barrier and drift under electric field with the mobility as high as an order of 10−13 cm2/sec V at room temperature.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 77.22.Jp

    Dielectric breakdown and space-charge effects

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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