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Applied Physics Letters / Volume 96 / Issue 9 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 96, 091904 (2010); http://dx.doi.org/10.1063/1.3339881 (3 pages)

Optical anisotropies of Si grown on step-graded SiGe(110) layers

R. E. Balderas-Navarro1, L. F. Lastras-Martínez1, K. Arimoto2, R. Castro-García1, O. Villalobos-Aguilar1, A. Lastras-Martínez1, K. Nakagawa2, K. Sawano3, Y. Shiraki3, N. Usami4, and K. Nakajima4

1Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, 78000 San Luis Potosí, Mexico
2Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan
3Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan
4Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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(Received 29 December 2009; accepted 2 February 2010; published online 1 March 2010)

Macroreflectance and microreflectance difference spectroscopies have been used to measure the strain induced optical anisotropies of semiconductor structures comprised of strained Si(110) thin films deposited on top of step-graded SiGe virtual substrates. The stress relaxation mechanism mainly occurs by the introduction of microtwin formation, whose fluctuation depends strongly on growth conditions. Correlations of such optical diagnostics with x-ray diffraction measurements and atomic force microscopy images, allow for the in situ study of the strain within both the top Si layer and the SiGe underneath with an spatial resolution of at least 5 μm.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

atomic force microscopy, crystal microstructure, elemental semiconductors, internal stresses, piezo-optical effects, reflectivity, semiconductor thin films, silicon, stress relaxation, twinning, X-ray diffraction

PACS

  • 78.66.Db

    Elemental semiconductors and insulators

  • 78.20.hb

    Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

  • 68.60.Bs

    Mechanical and acoustical properties

  • 81.40.Jj

    Elasticity and anelasticity, stress-strain relations

  • 62.40.+i

    Anelasticity, internal friction, stress relaxation, and mechanical resonances

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3339881

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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