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Applied Physics Letters / Volume 96 / Issue 9 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 96, 091907 (2010); http://dx.doi.org/10.1063/1.3343347 (3 pages)

Highly polarized Raman scattering anisotropy in single GaN nanowires

E. O. Schäfer-Nolte1,2, T. Stoica1, T. Gotschke1, F. Limbach1, E. Sutter2, P. Sutter2, and R. Calarco1

1Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT (Fundamentals of Future Information Technology), 52425 Jülich, Germany
2Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA

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(Received 22 January 2010; accepted 10 February 2010; published online 3 March 2010)

Single GaN nanowires and larger GaN ensembles are investigated by Raman spectroscopy. Spectra of nanowire ensembles prove the high crystal quality and are in agreement with selection rules for the wurtzite structure. Single nanowires are studied with a spatial resolution of the order of 400 nm for different polarization directions of the incident laser beam relative to the nanowire axis. In the single wire spectrum, only the A1(TO) was observed and the Raman intensity was suppressed for perpendicular polarization. These results confirm that Raman scattering in isolated GaN nanowires is governed by size effects.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, laser beams, nanowires, polarisation, Raman spectra, wide band gap semiconductors

PACS

  • 78.30.Fs

    III-V and II-VI semiconductors

  • 68.65.La

    Quantum wires (patterned in quantum wells)

  • 81.05.Ea

    III-V semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3343347

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    K. Jeganathan, R. K. Debnath, R. Meijers, T. Stoica, R. Calarco, D. Grützmacher, and H. Lüth, J. Appl. Phys. 105, 123707 (2009)JAPIAU000105000012123707000001.

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