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Applied Physics Letters / Volume 96 / Issue 9 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 96, 091911 (2010); http://dx.doi.org/10.1063/1.3350894 (3 pages)

Anharmonic decay of g-process longitudinal optical phonons in silicon

Z. Aksamija1 and U. Ravaioli1,2

1Department of Electrical and Computer Engineering, University of Illinois at Urbana/Champaign, Urbana, 61801 Illinois, USA
2Beckman Institute, University of Illinois at Urbana/Champaign, Urbana, 61801 Illinois, USA

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(Received 2 September 2009; accepted 11 February 2010; published online 4 March 2010)

We study phonons produced by transitions between the equivalent X valleys in silicon. We use the Monte Carlo method first to select stochastically the time between phonon collisions, and then to select a final-state pair of phonons from the probability distribution for anharmonic decay. Our results show that g-process phonons decay into one near-equilibrium transverse acoustic phonon and another intermediate longitudinal phonon either on the acoustic or optical branch. This second phonon has energies between 40 and 50 meV and undergoes further decay before turning into a pair of near-equilibrium transverse acoustic phonons, presenting a potential additional bottleneck.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electron-phonon interactions, elemental semiconductors, Monte Carlo methods, phonon-phonon interactions, silicon, stochastic processes

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3350894

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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