Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy

Onuma, T.; Uedono, A.; Asamizu, H.; Sato, H.; Kaeding, J. F.; Iza, M.; DenBaars, S. P.; Nakamura, S.; Chichibu, S. F.

doi:doi:10.1063/1.3337098

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The response of mechanical and electronic properties of graphane to the elastic strain

Based on first-principles calculations, we resent a method to reveal the elastic properties of recently synthesized monolayer hydrocarbon, graphane. The in-plane stiffness and Poisson’s ratio values are found to be smaller than those of graphene, and its yielding strain decreases in the presence of various vacancy defects and also at high ambient temperature. We also found that the band gap can be strongly modified by applied strain in the elastic range.

Roles of carbon in light emission of ZnO

The origin of green light emission of ZnO has been a controversial topic. First-principles electronic structure calculations so far failed to provide useful evidence due to severe underestimation of band gap and ambiguous defect energy levels. In this work, we carried out first-principles electronic structure calculations on defected ZnO with a hybrid density functional. It was found that carbon, which cannot be completely avoided in fabricating processes, plays an important role in the commonl...

The influences of enhanced stacking fault (SF) formation, which is peculiar to nitrogen-(N-) polarity growth and lattice-mismatched semipolar heteroepitaxy, on the electrical properties of (10 math

) Mg-doped GaN (GaN:Mg) epilayers were investigated. Although the residual donor concentration was higher than (0001) GaN because of N-polar growth, comparatively low Mg doping (3×10¹⁹ cm⁻³) gave a hole concentration approximately 1.5×10¹⁸ cm⁻³, which was an order of magnitude higher than (0001) GaN:Mg. As the acceptor ionization energy estimated from low temperature photoluminescence was quite similar for (10 math

) and (0001) GaN:Mg, the high Mg activation seems to result with the aid of high density SFs. Because the Doppler broadening S parameter for the positron annihilation measurement, which reflects the concentration or size of negatively charged cation vacancies, of (10 math

) GaN:Mg was smaller than (0001) case, (10 math

) orientation is well suited to Mg-doping.

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KEYWORDS and PACS

Keywords

Doppler broadening, gallium compounds, III-V semiconductors, magnesium, MOCVD, photoluminescence, positron annihilation, semiconductor doping, semiconductor epitaxial layers, stacking faults, vacancies (crystal), vapour phase epitaxial growth

PACS

78.66.Fd

III-V semiconductors
61.72.uj

III-V and II-VI semiconductors
73.61.Ey

III-V semiconductors
78.55.Cr

III-V semiconductors
78.70.Bj

Positron annihilation
78.55.-m

Photoluminescence, properties and materials

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http://dx.doi.org/10.1063/1.3337098

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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