APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 092101 (2010); http://dx.doi.org/10.1063/1.3352556 (3 pages)

Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate

Wei Zhao1, Ru-Zhi Wang1,2, Xue-Mei Song1, Hao Wang1, Bo Wang1, Hui Yan1, and Paul K. Chu2

1Laboratory of Thin Film Materials, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, People's Republic of China
2Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong

View MapView Map

(Received 8 January 2010; accepted 12 February 2010; published online 1 March 2010)

A series of nanostructured GaN Films have been prepared on Si substrates. Field emission measurements show that the oriented nanostructured GaN film with a thickness of 40 nm has an ultralow threshold field of 1.2 V/μm at 1 mA/cm2 and yields a stable emission current of 40 mA/cm2 at 2.8 V/μm, which is comparable to those of carbon nanotubes. A polarization field emission enhancement mechanism with ballistic electron transport is proposed to explain the origin of this ultralow-threshold field emission phenomenon.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

ballistic transport, electron field emission, gallium compounds, III-V semiconductors, nanostructured materials, semiconductor thin films

PACS

  • 79.70.+q

    Field emission, ionization, evaporation, and desorption

  • 73.50.Fq

    High-field and nonlinear effects

  • 73.61.Ey

    III-V semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3352556

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. I. Pankove and H. Schade, Appl. Phys. Lett. 25, 53 (1974)APPLAB000025000001000053000001.

    R. Z. Wang, B. Wang, H. Wang, H. Zhou, A. P. Huang, M. K. Zhu, H. Yan, and X. H. Yan, Appl. Phys. Lett. 81, 2782 (2002)APPLAB000081000015002782000001.

    C. -C. Tang, X. -W. Xu, L. Hu, and Y. -X. Li, Appl. Phys. Lett. 94, 243105 (2009)APPLAB000094000024243105000001.

    V. T. Binh and C. Adessi, Phys. Rev. Lett. 85, 864 (2000).

    R. Z. Wang, X. M. Ding, B. Wang, K. Xue, J. B. Xu, H. Yan, and X. Y. Hou, Phys. Rev. B 72, 125310 (2005).

    R. Z. Wang, H. Yan, B. Wang, X. W. Zhang, and X. Y. Hou, Appl. Phys. Lett. 92, 142102 (2008)APPLAB000092000014142102000001.

    T. Y. Tsai, C. Y. Lee, N. H. Tai, and W. H. Tuan, Appl. Phys. Lett. 95, 013107 (2009)APPLAB000095000001013107000001.

    P. Rai, D. R. Mohapatra, K. S. Hazra, D. S. Misra, and S. P. Tiwari, Appl. Phys. Lett. 93, 131921 (2008)APPLAB000093000013131921000001.

    J. B. You, X. W. Zhang, P. F. Cai, J. J. Dong, Y. Gao, Z. G. Yin, N. F. Chen, R. Z. Wang, and H. Yan, Appl. Phys. Lett. 94, 262105 (2009)APPLAB000094000026262105000001.

    T. Sugino, T. Hori, C. Kimura, and T. Yamamoto, Appl. Phys. Lett. 78, 3229 (2001)APPLAB000078000021003229000001.

    R. D. Underwood, P. Kozodoy, S. Keller, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 73, 405 (1998)APPLAB000073000003000405000001.

    V. Ranjan, G. Allan, C. Priester, and C. Delerue, Phys. Rev. B 68, 115305 (2003).

    F. Bechstedt, U. Grossner, and J. Furthmüller, Phys. Rev. B 62, 8003 (2000).


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Ultralow-threshold field emission from oriented nanostructured GaN films on Si substrate
  2. Roles of carbon in light emission of ZnO
  3. Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
  4. The response of mechanical and electronic properties of graphane to the elastic strain
  5. Solid fraction in dendritic solidification of a liquid
Go to AIP Home
Copyright © American Institute of Physics
close