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Applied Physics Letters / Volume 96 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 092102 (2010); http://dx.doi.org/10.1063/1.3339303 (3 pages)

Electron beam induced current investigations of Pt/SrTiO3−x interface exposed to chemical and electrical stresses

W. Jiang1, D. Evans1, J. A. Bain2, M. Skowronski1, and P. A. Salvador1

1Department of Materials Science and Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, Pennsylvania 15213, USA
2Department of Electrical and Computer Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, Pennsylvania 15213, USA

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(Received 12 November 2009; accepted 5 February 2010; published online 1 March 2010)

Pt Schottky contacts were fabricated on oxygen deficient SrTiO3−x [001] single crystals. Electron beam induced current (EBIC) and atomic force microscopy images taken on etched SrTiO3 (001) surfaces revealed that the dark {001} oriented lines observed in EBIC correlate with arrays of dislocation etch pits. Annealing contacts in air (at 120 °C for 10 min) changed the dislocation-related EBIC contrast from dark to bright. Electrically stressing the air-annealed Schottky contacts at −10 V for 1 h caused the dislocation-related EBIC contrast to return to dark. The contrast changes are interpreted as arising from oxygen vacancy motion in response to chemical or electrical stresses.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

annealing, atomic force microscopy, dislocation etching, EBIC, platinum, Schottky barriers, stress effects, strontium compounds, vacancies (crystal)

PACS

  • 61.72.Ff

    Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

  • 68.37.Hk

    Scanning electron microscopy (SEM) (including EBIC)

  • 68.37.Ps

    Atomic force microscopy (AFM)

  • 81.40.Gh

    Other heat and thermomechanical treatments

  • 61.72.jd

    Vacancies

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3339303

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    H. S. Lee, J. A. Bain, S. Choi, and P. A. Salvador, Appl. Phys. Lett. 90, 202107 (2007)APPLAB000090000020202107000001.

    T. Shimizu and H. Okushi, J. Appl. Phys. 85, 7244 (1999)JAPIAU000085000010007244000001.

    H. J. Leamy, J. Appl. Phys. 53, R51 (1982)JAPIAU000053000006000R51000001.

    K. Szot, W. Speier, R. Carius, U. Zastrow, and W. Beyer, Phys. Rev. Lett. 88, 075508 (2002).

    X. L. Li, B. Chen, H. Y. Jing, H. B. Lu, B. R. Zhao, Z. H. Mai, and Q. J. Jia, Appl. Phys. Lett. 87, 222905 (2005)APPLAB000087000022222905000001.

    K. Otsuka, A. Kuwabara, A. Nakamura, T. Yamamoto, K. Matsunaga, and Y. Ikuhara, Appl. Phys. Lett. 82, 877 (2003)APPLAB000082000006000877000001.

    M. Kim, G. Duscher, N. D. Browning, K. Sohlberg, S. T. Pantelides, and S. J. Pennycook, Phys. Rev. Lett. 86, 4056 (2001).


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