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Applied Physics Letters / Volume 96 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 092103 (2010); http://dx.doi.org/10.1063/1.3336011 (3 pages)

Fabrication and characterization of an induced GaAs single hole transistor

O. Klochan1, J. C. H. Chen1, A. P. Micolich1, A. R. Hamilton1, K. Muraki2, and Y. Hirayama3

1School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
2NTT Basic Research Laboratory, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
3Department of Physics, Tohoku University, 6-3 Aramaki aza Aoba, Aobaku Sendai, Miyagi 980-8578, Japan

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(Received 16 January 2010; accepted 5 February 2010; published online 2 March 2010)

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and an order of magnitude better than in silicon SETs.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, Coulomb blockade, gallium arsenide, oscillations, semiconductor doping, semiconductor quantum dots, single electron transistors

PACS

  • 85.35.Gv

    Single electron devices

  • 89.20.Kk

    Engineering

  • 85.40.Ry

    Impurity doping, diffusion and ion implantation technology

  • 81.07.Ta

    Quantum dots

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3336011

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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