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Appl. Phys. Lett. 96, 092106 (2010); http://dx.doi.org/10.1063/1.3340461 (3 pages)

Influence of 4f electronic states on the surface states of rare-earth hexaborides

Swapnil Patil1, Ganesh Adhikary1, Geetha Balakrishnan2, and Kalobaran Maiti1

1Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400 005, India
2Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

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(Received 4 January 2010; accepted 9 February 2010; published online 3 March 2010)

We study the surface electronic structure of a series of rare-earth hexaborides using state-of-the-art high resolution photoemission spectroscopy. Experimental results reveal a surface state around 1.8 eV binding energy in all the hexaborides indicating its generic nature in this class of compounds. The surface and bulk electronic structures near the Fermi level, ϵF are almost similar in each of the compounds. This suggests an interesting possibility of fabricating new materials possessing low work function like LaB6 where the behavior of mobile electrons can be tuned by rare-earth substitutions.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 73.20.At

    Surface states, band structure, electron density of states

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

  • 71.20.Ps

    Other inorganic compounds

  • 71.15.Nc

    Total energy and cohesive energy calculations

  • 79.60.Bm

    Clean metal, semiconductor, and insulator surfaces

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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