APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 092107 (2010); http://dx.doi.org/10.1063/1.3343348 (3 pages)

Electron mobility increase in submicronic transistors integrated on ultrathin silicon membranes subjected to high mechanical stress

Bogdan Bercu, Laurent Montès, Florent Rochette, Mireille Mouis, Xu Xin, and Panagiota Morfouli

Institute of Microelectronics, Electromagnetism and Photonics (IMEP-LAHC), UMR 5130 (Grenoble INP/UJF/CNRS/Université de Savoie), Minatec, 3 Parvis Louis Néel, 38016 Grenoble, France

View MapView Map

(Received 20 September 2009; accepted 14 January 2010; published online 4 March 2010)

In this contribution we investigate an original method to apply high values of biaxial stress: The integration of submicronic fully depleted silicon on insulator transistors on ultrathin silicon membranes. The membranes are micromachined in the device substrate, the buried oxide facilitating the control of the membrane thickness below 1 μm. High values of biaxial stress can thus be applied on the transistor channel without the drawbacks of conventional methods. The experimental results obtained using 750 nm thick membranes are presented. The piezoresistive longitudinal coefficient obtained for strained silicon on insulator wafer (240×10−12 Pa−1) is in good agreement with the results obtained by the four-probe bending method.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

electron mobility, elemental semiconductors, membranes, micromachining, piezoresistance, silicon, silicon-on-insulator, thin film transistors

PACS

  • 85.30.Tv

    Field effect devices

  • 85.85.+j

    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3343348

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. S. Smith, Phys. Rev. 94, 42 (1954).


For access to citing articles, you need to log in.


Figures (6)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Electron mobility increase in submicronic transistors integrated on ultrathin silicon membranes subjected to high mechanical stress
  2. Influence of 4f electronic states on the surface states of rare-earth hexaborides
  3. Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film
  4. Influence of Na on Cu(In,Ga)Se2 solar cells grown on polyimide substrates at low temperature: Impact on the Cu(In,Ga)Se2/Mo interface
  5. Fabrication and characterization of an induced GaAs single hole transistor
Go to AIP Home
Copyright © American Institute of Physics
close