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Applied Physics Letters / Volume 96 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 092108 (2010); http://dx.doi.org/10.1063/1.3353973 (3 pages)

Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability

Moon Hyung Jang1, Seung Jong Park1, Dong Hyeok Lim1, Sung Jin Park1, Mann-Ho Cho1, Seong Jin Cho2, Yoon Ho Cho3, and Jong-Heun Lee3

1Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
2Department of Physics, Kyungseong University, Pusan 608-736, Republic of Korea
3Division of Materials Science and Engineering, Korea University, Seoul 136-701, Republic of Korea

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(Received 30 December 2009; accepted 13 February 2010; published online 4 March 2010)

Oxygen incorporated Ge2Sb2Te5 (GST) films were prepared by an ion beam sputtering deposition method. I-V curves of the oxygen incorporated GST active layer showed that the threshold voltage (Vth) varied, depending on the level of incorporated oxygen. In the case of a GST film with an elevated oxygen content of 30.8%, the GST layer melted at 9.02 V due to the instability conferred by the high oxygen content. The formation of Ge-deficient hexagonal phases such as GeSb2Te4 and Sb2Te3 appear to be responsible for the Vth variation. Impedance analyses indicated that the resistance in GST films with oxygen contents of 16.7% and 21.7% had different origins. Thermal desorption spectroscopy data indicate that moisture and hydrocarbons were more readily desorbed at higher oxygen content because the oxygen incorporated GST films are more hydrophilic than undoped GST films.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

antimony alloys, desorption, germanium alloys, ion beam assisted deposition, semiconductor thin films, sputter deposition, tellurium alloys, thermal stability

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3353973

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. Privitera, E. Rimini, and R. Zonca, Appl. Phys. Lett. 85, 3044 (2004)APPLAB000085000015003044000001.

    K. Kim, J. -C. Park, J. -G. Chung, S. A. Song, M. -C. Jung, Y. M. Lee, H. -J. Shin, B. Kuh, Y. Ha, and J. -S. Noh, Appl. Phys. Lett. 89, 243520 (2006)APPLAB000089000024243520000001.

    P. Brix and G. Herzberg, J. Chem. Phys. 21, 2240 (1953)JCPSA6000021000012002240000001.

    M. H. Jang, S. J. Park, D. H. Lim, M. H. Cho, K. H. Do, D. H. Ko, and H. C. Sohn, Appl. Phys. Lett. 95, 012102 (2009)APPLAB000095000001012102000001.


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