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Appl. Phys. Lett. 96, 092111 (2010); http://dx.doi.org/10.1063/1.3339883 (3 pages)

Junction properties of Au/ZnO single nanowire Schottky diode

Sachindra Nath Das, Ji-Huck Choi, Jyoti Prakash Kar, Kyeong-Ju Moon, Tae Il Lee, and Jae-Min Myoung

Department of Material Science and Engineering, Information and Electronic Materials Research Laboratory, Yonsei University, 134 Shinchon-Dong, Seoul 120-749, Republic of Korea

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(Received 19 January 2010; accepted 8 February 2010; published online 5 March 2010)

In this study, we have analyzed the Au/ZnO single nanowire based Schottky diode by investigating temperature dependent current voltage and x-ray photoelectron spectroscopy (XPS) measurements. The calculated barrier height of the Schottky diodes by using the thermionic emission model is in good agreement with the value obtained from the XPS measurements but lower than the theoretically predicted value. The ionization of interface states has been considered for explaining this discrepancy.

© 2010 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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    F. Léonard, A. A. Talin, B. S. Swartzentruber, and S. T. Picraux, Phys. Rev. Lett. 102, 106805 (2009).

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    B. J. Coppa, R. F. Davis, and R. J. Nemanich, Appl. Phys. Lett. 82, 400 (2003)APPLAB000082000003000400000001.

    S. N. Das, J. P. Kar, J. H. Choi, S. Byeon, Y. D. Jho, and J. M. Myoung, Appl. Phys. Lett. 95, 111909 (2009)APPLAB000095000011111909000001.


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