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Applied Physics Letters / Volume 96 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 092112 (2010); http://dx.doi.org/10.1063/1.3294329 (3 pages)

Current fluctuations in three-dimensionally stacked Si nanocrystals thin films

Xin Zhou, Ken Uchida, and Shunri Oda

Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology and JST-SORST, 2-12-1-S9-11, O-okayama, Meguro-ku, Tokyo 152-8552, Japan

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(Received 16 September 2009; accepted 27 December 2009; published online 5 March 2010)

In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (Ids) exhibits fluctuations in particular gate voltage (Vg) and drain voltage (Vds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

current fluctuations, elemental semiconductors, silicon, surface charging, thin film transistors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3294329

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    K. Nishiguchi, X. Zhao, and S. Oda, J. Appl. Phys. 92, 2748 (2002)JAPIAU000092000005002748000001.

    X. Zhou, K. Usami, M. A. Rafiq, Y. Tsuchiya, H. Mizuta, and S. Oda, J. Appl. Phys. 104, 024518 (2008)JAPIAU000104000002024518000001.

    M. A. Rafiq, Y. Tsuchiya, H. Mizuta, S. Oda, S. Uno, Z. A. K. Durrani, and W. I. Milne, Appl. Phys. Lett. 87, 182101 (2005)APPLAB000087000018182101000001.

    X. Zhou, K. Uchida, H. Mizuta, and S. Oda, J. Appl. Phys. 105, 124518 (2009)JAPIAU000105000012124518000001.

    M. Shalchian, J. Grisolia, G. Ben Assayag, H. Coffin, S. M. Atarodi, and A. Claverie, Appl. Phys. Lett. 86, 163111 (2005)APPLAB000086000016163111000001.

    D. N. Kouvatsos, V. Ioannou-Sougleridis, and A. G. Nassiopoulou, Appl. Phys. Lett. 82, 397 (2003)APPLAB000082000003000397000001.

    R. Nuryadi, H. Ikeda, Y. Ishikawa, and M. Tabe, Appl. Phys. Lett. 86, 133106 (2005)APPLAB000086000013133106000001.

    X. Zhou, K. Uchida, H. Mizuta, and S. Oda, J. Appl. Phys. 106, 044511 (2009)JAPIAU000106000004044511000001.


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