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Applied Physics Letters / Volume 96 / Issue 9 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 092113 (2010); http://dx.doi.org/10.1063/1.3340947 (3 pages)

Carrier transport in strained p-channel field-effect transistors with diamondlike carbon liner stressor

Ran Cheng, Bin Liu, and Yee-Chia Yeo

Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260

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(Received 18 January 2010; accepted 10 February 2010; published online 5 March 2010)

We report the investigation of carrier backscattering characteristics of compressively strained p-channel field-effect transistors (p-FETs) with diamondlike carbon (DLC) liner stressor. p-FETs strained by the DLC liner exhibit up to ∼ 40% enhancement in carrier injection velocity υinj. However, a slight reduction in ballistic efficiency Bsat is also observed in the DLC stressed p-FETs. Despite the Bsat degradation, an overall boost in saturation drive current IDsat is achieved. For a DLC stressed p-FET with gate length LG = 90 nm, a ∼ 36% enhancement in IDsat is observed with a ∼ 40% improvement in υinj. The dependence of IDsat on υinj and carrier mobility μ is also discussed in this letter.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

carrier mobility, field effect transistors

PACS

  • 85.30.Tv

    Field effect devices

  • 72.20.Fr

    Low-field transport and mobility; piezoresistance

  • 72.20.Ee

    Mobility edges; hopping transport

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3340947

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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