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Applied Physics Letters / Volume 96 / Issue 9 / MAGNETISM AND SUPERCONDUCTIVITY

Appl. Phys. Lett. 96, 092505 (2010); http://dx.doi.org/10.1063/1.3339872 (3 pages)

Interplay between crystallographic orientation and electric transport properties in La2/3Sr1/3MnO3 films

A. Tebano, A. Orsini, D. Di Castro, P. G. Medaglia, and G. Balestrino

CNR-SPIN and Dipartimento di Ingegneria Meccanica, Università di Roma Tor Vergata, I-00133 Roma, Italy

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(Received 11 August 2009; accepted 5 February 2010; published online 1 March 2010)

The effect of crystallographic interface orientation on the electric transport properties of fully strained La2/3Sr1/3MnO3 films grown onto LaAlO3 substrates has been investigated. It is found that, relative to the (001) orientation, the (110) orientation strongly enhances the transport properties for film thickness in the range between 3 and 12 nm. Such an effect was ascribed to reduced [relative to the (001) substrates] tetragonal distortion induced by epitaxy onto (110)-oriented substrates. The reduced tetragonal distortion quenches the occupational imbalance between the Mn eg orbitals thus, ultimately, reinforcing the ferromagnetic double exchange transport mechanism.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

ceramics, crystal orientation, galvanomagnetic effects, insulating thin films, lanthanum compounds, strontium compounds

PACS

  • 73.61.Ng

    Insulators

  • 73.50.Jt

    Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

  • 68.55.J-

    Morphology of films

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3339872

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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