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Appl. Phys. Lett. 96, 092511 (2010); http://dx.doi.org/10.1063/1.3330942 (3 pages)

Co-concentration dependence of half-metallic properties in Co–Mn–Si epitaxial films

Y. Sakuraba1, N. Hirose2, M. Oogane2, T. Nakamura3, Y. Ando2, and K. Takanashi1

1Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
2Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 6-6-05, Aramaki, Aoba-ku, Sendai 980-8579, Japan
3Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Koto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan

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(Received 27 December 2009; accepted 1 February 2010; published online 3 March 2010)

Co-enriched Co2MnSi epitaxial films, i.e., Co2(1+x)Mn1−xSi1−x (CCMS) were fabricated to investigate the Co-concentration dependence of half-metallicity in a Co–Mn–Si Heusler alloy. The tunnel magnetoresistance ratio in the magnetic tunnel junctions with a CCMS electrode slightly reduces with x from −0.02 to 0.13, then suddenly drops at x = 0.20. The half-metallic gap in the G-V curve also disappears when x becomes 0.20. The multiplet structure in x-ray magnetic circular dichroism spectra around Co L-edges, implying half-metallicity of CCMS, also vanishes at x = 0.20. These results consistently indicate the half-metallic nature of CCMS is destroyed when the Co atomic concentration is over 57 at. %.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.20.Ls

    Magneto-optical effects

  • 68.55.-a

    Thin film structure and morphology

  • 75.70.Cn

    Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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