Microstress relaxation effect of Pb(Zr0.52Ti0.48)O3 films with thicknesses for micro/nanopiezoelectric device

Lee, Jeong Hoon; Hwang, Kyo Seon; Kim, Tae Song

doi:doi:10.1063/1.3330897

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Polarization inversion in a ferroelectric liquid crystal studied by nuclear magnetic resonance

A ferroelectric liquid crystal, S-2-methylbutyl 4-n-octanoyloxybiphenyl-4′-carboxylate, undergoing a characteristic polarization inversion, has been studied by nuclear magnetic resonance (NMR). In addition to the discontinuities at the first-order isotropic and recrystallization phase transitions, the nuclear magnetic relaxation revealed a weak anomaly attributed to the soft mode at the Sm-A−Sm-C∗ liquid crystalline phase transition. Besides, the polarization inversion in the Sm-C∗ phase was m...

Technique to improve performance of Al₂O₃ interpoly dielectric using a La₂O₃ interface scavenging layer for floating gate memory structures

A technique of scavenging the SiO2 interfacial layer (IL) to improve the electrical performance of Al2O3 as the interpoly dielectric for flash memories has been studied. Scavenging was performed by the reaction of a thin La2O3 layer with the native oxide to form a high-κ lanthanum silicate. Significant improvement in the charge trapping and leakage characteristics were obtained. Transmission electron microscopy analysis was done to corroborate the electrical results. Results show that seven ord...

In this study, we analyzed the microstress of Pb(Zr_0.52Ti_0.48)O₃ (PZT) films using Raman spectrum and the macrostress using the wafer curvature method. Based on the stress analysis, we also determined the relationship between the residual stress and piezoelectric properties. We found that a thickness of 1 μm was critical since the stress relaxation starts due to surface roughening. Similarly, the film thickness dependence of the piezoelectric coefficient had saturation values around 1 μm, where the preferred orientation started to change from (111) to (110), indicating that the piezoelectric response was related to the stress relaxation with a preferred orientation change.

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KEYWORDS and PACS

Keywords

internal stresses, lead compounds, micromechanics, piezoelectric materials, piezoelectric thin films, Raman spectra, stress analysis, stress relaxation, surface roughness, texture

PACS

77.55.hj

PZT
68.55.jd

Thickness
68.55.jm

Texture
68.60.Bs

Mechanical and acoustical properties
62.40.+i

Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Jj

Elasticity and anelasticity, stress-strain relations
77.84.Cg

PZT ceramics and other titanates
77.65.Bn

Piezoelectric and electrostrictive constants

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http://dx.doi.org/10.1063/1.3330897

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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