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Applied Physics Letters / Volume 96 / Issue 9 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 093101 (2010); http://dx.doi.org/10.1063/1.3332479 (3 pages)

Mechanism of morphological transition in heteroepitaxial growth of metal films

Cui-Lian Li1 and Chin-Kun Hu2

1Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
2Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan

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(Received 10 November 2009; accepted 29 January 2010; published online 1 March 2010)

We investigate the mechanisms of three-dimensional (3D) to two-dimensional (2D) morphological transition in the heteroepitaxial growth of metal films by kinetic Monte Carlo simulations, and find that the difference between two types of neighbor interactions play an important role on the film morphology. The difference will vanishes with the film growing up. Just what the difference vanishes causes the morphological transition from 3D-cluster to 2D-island. Combined with elastic energy, we can predict which layer first occurs morphological transition. Our predicted results are consistent with the experiment reported by Su et al. [Phys. Rev. B 71, 073304 (2005) ].

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

epitaxial growth, epitaxial layers, metallic thin films, Monte Carlo methods, palladium, silver, surface morphology

PACS

  • 68.55.J-

    Morphology of films

  • 81.15.Aa

    Theory and models of film growth

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 68.55.A-

    Nucleation and growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3332479

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    W. B. Su, H. Y. Lin, Y. P. Chiu, H. T. Shih, T. Y. Fu, Y. W. Chen, C. S. Chang, and T. T. Tsong, Phys. Rev. B 71, 073304 (2005).

    M. Hupalo, V. Yeh, L. Berbil-Bautista, S. Kremmer, E. Abram, and M. C. Tringides, Phys. Rev. B 64, 155307 (2001).

    R. L. Schwoebel, J. Appl. Phys. 40, 614 (1969)JAPIAU000040000002000614000001
    C. Laubschat, M. Prietsch, M. Domke, E. Weschke, G. Remmers, T. Mandel, J. E. Ortega, and G. Kaindl, Phys. Rev. Lett. 62, 1306 (1989), K. R. Roos and M. C. Tringides, ibid. 85, 1480 (2000).

    M. Meixner, R. Kunert, and E. Schöll, Phys. Rev. B 67, 195301 (2003).

    G. H. Gilmer and P. Bennema, J. Appl. Phys. 43, 1347 (1972)JAPIAU000043000004001347000001.

    G. W. Jones, J. M. Marcano, J. K. Norskov, and J. A. Venables, Phys. Rev. Lett. 65, 3317 (1990).

    G. Y. Jing, H. L. Duan, X. M. Sun, Z. S. Zhang, J. Xu, Y. D. Li, J. X. Wang, and D. P. Yu, Phys. Rev. B 73, 235409 (2006).


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