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Appl. Phys. Lett. 96, 093103 (2010); http://dx.doi.org/10.1063/1.3337093 (3 pages)

Temperature dependent thermal conductivity of Si/SiC amorphous multilayer films

Monalisa Mazumder1, Theodorian Borca-Tasciuc2, Sean C. Teehan3, Emilio Stinzianni3, Harry Efstathiadis3, and Slowa Solovyov4

1Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
2Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
3College of Nanoscale Science and Engineering, University at Albany, State University of New York, Albany, New York 12203, USA
4Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA

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(Received 16 October 2009; accepted 7 February 2010; published online 1 March 2010)

The cross-plane thermal conductivity of 22 nm period Si/SiC amorphous multilayer films deposited by magnetron sputtering and measured using a differential 3ω method was found to decrease from 2.0 W/mK at 300 K to 1.1 W/mK at 80 K. Structural disorder in each of the constituent layers of the amorphous multilayer films was confirmed by high resolution transmission electron microscopy. Estimations of the relative contributions of interface and intrinsic layer thermal resistance based on microscopic phonon transport models indicate that mean free path reductions induced by the structural disorder within the multilayer films are responsible for the observed experimental trends.

© 2010 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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