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Applied Physics Letters / Volume 96 / Issue 9 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 093104 (2010); http://dx.doi.org/10.1063/1.3337094 (3 pages)

Optically and thermally manipulated spin transport through a quantum dot

Yibo Ying and Guojun Jin

Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China

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(Received 27 December 2009; accepted 6 February 2010; published online 1 March 2010)

We study the associated effects of polarized light and temperature bias on the charge and spin transport through a semiconductor quantum dot connected to two ferromagnetic electrodes. A spin-dependent thermoelectric current is generated in such a system, and a totally pure spin current can be obtained without an accompanying charge current. Furthermore, the sign reversal of tunnel magnetoresistance is found, which is induced by temperature difference and Rabi frequency.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

ferromagnetic materials, semiconductor quantum dots, thermoelectricity, tunnelling magnetoresistance

PACS

  • 78.67.Hc

    Quantum dots

  • 72.20.Pa

    Thermoelectric and thermomagnetic effects

  • 85.75.-d

    Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

  • 73.21.La

    Quantum dots

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3337094

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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