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Applied Physics Letters / Volume 96 / Issue 9 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 093107 (2010); http://dx.doi.org/10.1063/1.3339873 (3 pages)

Electrical bistability and negative differential resistance in single Sb-doped ZnO nanobelts/SiOx/p-Si heterostructured devices

Ya Yang, Junjie Qi, Wen Guo, Zi Qin, and Yue Zhang

Department of Materials Physics, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 30 Xueyuan Road, Beijing 100083, People's Republic of China

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(Received 23 January 2010; accepted 9 February 2010; published online 2 March 2010)

We report the electrical bistability and negative differential resistance (NDR) in single Sb-doped ZnO nanobelts/SiOx/p-type Si heterostructured devices. The current-voltage (I-V) characteristics of the devices were discussed in terms of the energy band diagram of the devices. The origin of the electrical bistability and NDR is suggested to be associated with the electric-field-induced charge transfer. The performance of the fabricated devices can be enhanced under the ultraviolet light illumination.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

antimony, band structure, charge exchange, electrical conductivity, elemental semiconductors, II-VI semiconductors, nanobelts, semiconductor devices, semiconductor heterojunctions, silicon, silicon compounds, wide band gap semiconductors, zinc compounds

PACS

  • 85.30.De

    Semiconductor-device characterization, design, and modeling

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3339873

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    L. Esaki and P. J. Stiles, Phys. Rev. Lett. 16, 1108 (1966).

    K. H. Liu, P. Gao, Z. Xu, X. D. Bai, and E. G. Wang, Appl. Phys. Lett. 92, 213105 (2008)APPLAB000092000021213105000001.

    Y. Yang, J. J. Qi, Y. Zhang, Q. L. Liao, L. D. Tang, and Z. Qin, Appl. Phys. Lett. 92, 183117 (2008)APPLAB000092000018183117000001.

    Y. Yang, Q. L. Liao, J. J. Qi, Y. Zhang, L. D. Tang, and N. Ye, Appl. Phys. Lett. 93, 133101 (2008)APPLAB000093000013133101000001.

    J. Q. Hu and Y. Bando, Appl. Phys. Lett. 82, 1401 (2003)APPLAB000082000009001401000001.

    J. A. Aranovich, D. Golmayo, A. L. Fahrenbuch, and R. H. Bube, J. Appl. Phys. 51, 4260 (1980)JAPIAU000051000008004260000001.


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