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Applied Physics Letters / Volume 96 / Issue 9 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 093109 (2010); http://dx.doi.org/10.1063/1.3340897 (3 pages)

Multiferroic GaN nanofilms grown within Na-4 mica channels

Santanu Bhattacharya, A. Datta, and D. Chakravorty

DST Unit on Nanoscience and MLS Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India

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(Received 26 November 2009; accepted 28 January 2010; published online 3 March 2010)

Gallium nitride nanofilms grown within nanochannels of Na-4 mica structure, exhibit ferromagnetism even at room temperature due to the presence of gallium vacancies at the surfaces of the nanofilms. These nanofilms also show a ferroelectric behavior at room temperature ascribed to a small distortion in the crystal structure of GaN due to its growth within the Na-4 mica nanochannels. A colossal increase in 338% in dielectric constant was observed for an applied magnetic field of 26 kOe. The magnetoelectric effect is ascribed to magnetostriction of magnetic GaN phase.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

ferromagnetism, gallium compounds, III-V semiconductors, magnetoelectric effects, magnetostriction, multiferroics, nanofabrication, nanostructured materials, permittivity, wide band gap semiconductors

PACS

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 75.80.+q

    Magnetomechanical effects, magnetostriction

  • 77.22.Ch

    Permittivity (dielectric function)

  • 75.85.+t

    Magnetoelectric effects, multiferroics

  • 75.50.Pp

    Magnetic semiconductors

  • 77.80.-e

    Ferroelectricity and antiferroelectricity

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3340897

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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