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Appl. Phys. Lett. 96, 093110 (2010); http://dx.doi.org/10.1063/1.3343059 (3 pages)

Compensation between magnetoresistance and switching current in Co/Cu/Co spin valve pillar structure

K. W. Cheng1,2, C. Yu2, L. K. Lin1,2, Y. D. Yao3, Y. Liou2, J. H. Huang1, and S. F. Lee2

1Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan
2Institute of Physics, Academia Sinica, Taipei 115, Taiwan
3Institute of Applied Science and Engineering, Fu Jen University, Taipei 242, Taiwan

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(Received 21 October 2009; accepted 6 February 2010; published online 4 March 2010)

We examine the effects of modifying the Co hard layer thickness of Co/Cu/Co spin valve submicron pillars with current flowing perpendicular to the plane. The magnetoresistance (MR) ratios and switching currents show complementary behaviors. As the Co hard layer thickness is increased, the MR ratio shows an initial increase with a peak around 21 nm. The critical switching current shows a dip around the same thickness, which is close to the spin diffusion length. The product of the MR ratio and critical current density is about a constant independent of the Co hard layer thickness. Thus, we provide an approach to achieving maximum efficiency (MR ratio) and minimum consumption (critical current) for a practical device.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 75.47.De

    Giant magnetoresistance

  • 75.76.+j

    Spin transport effects

  • 75.60.-d

    Domain effects, magnetization curves, and hysteresis

  • 75.70.Cn

    Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

  • 72.15.Gd

    Galvanomagnetic and other magnetotransport effects

  • 75.30.Ds

    Spin waves

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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