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Applied Physics Letters / Volume 96 / Issue 9 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 093112 (2010); http://dx.doi.org/10.1063/1.3337097 (3 pages)

Single-photon emission from InGaAs quantum dots grown on (111) GaAs

Erik Stock1, Till Warming1, Irina Ostapenko1, Sven Rodt1, Andrei Schliwa1, Jan Amaru Töfflinger1, Anatol Lochmann1, Aleksandr I. Toropov2, Sergej A. Moshchenko2, Dimitry V. Dmitriev2, Vladimir A. Haisler2, and Dieter Bimberg1

1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
2Institute of Semiconductor Physics, Lavrenteva av 13, Novosibirsk 630090, Russia

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(Received 17 September 2009; accepted 8 February 2010; published online 4 March 2010)

In this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g(2)(0)<0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging ≤ 40 μeV down to the determination limit of our setup (10 μeV) was observed.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

excitons, gallium arsenide, III-V semiconductors, indium compounds, light polarisation, photoluminescence, quantum entanglement, quantum optics, semiconductor quantum dots

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3337097

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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