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Appl. Phys. Lett. 96, 093113 (2010); http://dx.doi.org/10.1063/1.3330889 (3 pages)

Heterotwin formation during growth of nanolayered Al-TiN composites

Dhriti Bhattacharyya1, Xiang-Yang Liu2, Arda Genc3, Hamish L. Fraser3, Richard G. Hoagland2, and Amit Misra1

1Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87544, USA
2MST-8 (Structure/Property Relations), Los Alamos National Laboratory, Los Alamos, New Mexico 87544, USA
3Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

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(Received 24 November 2009; accepted 2 February 2010; published online 4 March 2010)

High stacking fault energy (SFE) materials such as Al do not form twins easily. Here, the authors report, through high-resolution transmission electron microscopy, that Al layers in an alternating Al/TiN composite grow in a twin relationship to both the TiN and the underlying Al layers. Density functional theory based ab initio modeling reveals that nitrogen termination in the {111} growth plane of the TiN layers greatly favors the growth of twin oriented Al layers on them. This finding provides a definite way of creating a twin-modulated structure in high SFE materials.

© 2010 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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    G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993).


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