APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 9 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 093116 (2010); http://dx.doi.org/10.1063/1.3353987 (3 pages)

As doping of Si-based low-dimensional systems

F. Ruffino1,2, M. V. Tomasello3, M. Miritello2, G. Nicotra4, C. Spinella4, and M. G. Grimaldi1,2

1Dipartimento di Fisica e Astronomia, Università di Catania, via S. Sofia 64, I-95123 Catania, Italy
2CNR-IMM MATIS, via S. Sofia 64, I-95123, Catania, Italy
3Scuola Superiore di Catania, Via San Nullo 5/i, 95123 Catania, Italy
4Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, I-95121 Catania, Italy

View MapView Map

(Received 27 January 2010; accepted 13 February 2010; published online 5 March 2010)

In this work we studied the As redistribution in SiO2(70 nm)/Si(30 nm)/SiO2(70 nm) multilayer during postimplantation annealing. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO2 interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect could be qualitatively in agreement with a model that assumes a traps distribution into the Si in the first 2–3 nm above the SiO2/Si interfaces and along the Si grain boundaries. In particular, the traps concentration at the Si/SiO2 interfaces was estimated in 1014 traps/cm2.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

annealing, arsenic, grain boundaries, ion implantation, multilayers, Rutherford backscattering, semiconductor doping, silicon compounds, transmission electron microscopy

PACS

  • 61.72.U-

    Doping and impurity implantation

  • 85.40.Ry

    Impurity doping, diffusion and ion implantation technology

  • 68.65.Ac

    Multilayers

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 61.72.Mm

    Grain and twin boundaries

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3353987

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. B. Orlinskii, J. Schmidt, P. G. Baranov, D. M. Hofmann, C. de Mello Donegà, and A. Meijerink, Phys. Rev. Lett. 92, 047603 (2004).

    L. Pei, G. Duscher, C. Steen, P. Pichler, H. R. Ssel, E. Napolitani, D. De Salvador, A. M. Piro, A. Terrasi, F. Severac, F. Cristiano, K. Ravichandran, N. Gupta, and W. Windl, J. Appl. Phys. 104, 043507 (2008)JAPIAU000104000004043507000001.

    K. Sakamoto, K. Nishi, F. Ichikawa, and S. Ushio, J. Appl. Phys. 61, 1553 (1987)JAPIAU000061000004001553000001.

    R. Lechner, A. R. Stegner, R. N. Pereira, R. Dietmueller, M. S. Brandt, A. Ebbers, M. Trocha, H. Wiggers, and M. Stutzmann, J. Appl. Phys. 104, 053701 (2008)JAPIAU000104000005053701000001.

    A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, M. Stutzmann, and H. Wiggers, Phys. Rev. Lett. 100, 026803 (2008).

    A. Mimura, M. Fujii, S. Hayashi, D. Kovalev, and F. Koch, Phys. Rev. B 62, 12625 (2000).

    M. Fujii, A. Mimura, S. Hayashi, K. Yamamoto, C. Urakawa, and H. Ohta, J. Appl. Phys. 87, 1855 (2000)JAPIAU000087000004001855000001.

    B. J. Masters and J. M. Fairfield, J. Appl. Phys. 40, 2390 (1969)JAPIAU000040000006002390000001.

    A. Höfler, Th. Feudel, N. Strecker, W. Fichtner, K. -H. Stegemann, H. Syhre, and G. Dallmann, J. Appl. Phys. 78, 3671 (1995)JAPIAU000078000006003671000001.

    R. Pinacho, M. Jaraiz, P. Castrillo, I. Martin-Bragado, J. E. Rubio, and J. Barcolla, Appl. Phys. Lett. 86, 252103 (2005)APPLAB000086000025252103000001.

    M. Ferri, S. Solmi, A. Parisini, M. Bersani, D. Giubertoni, and M. Barozzi, J. Appl. Phys. 99, 113508 (2006)JAPIAU000099000011113508000001.


For access to citing articles, you need to log in.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. As doping of Si-based low-dimensional systems
  2. Nucleation and growth of nickel nanoclusters on graphene Moiré on Rh(111)
  3. Engineering directed excitonic energy transfer
  4. Heterotwin formation during growth of nanolayered Al-TiN composites
  5. Single-photon emission from InGaAs quantum dots grown on (111) GaAs
Go to AIP Home
Copyright © American Institute of Physics
close