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Applied Physics Letters / Volume 96 / Issue 9 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 96, 093301 (2010); http://dx.doi.org/10.1063/1.3337100 (3 pages)

Solution-processed bulk heterojunction photovoltaic devices based on poly(2-methoxy,5-octoxy)-1,4-phenylenevinylene-multiwalled carbon nanotubes/PbSe quantum dots bilayer

Yiyu Feng1, Daqin Yun2, Xuequan Zhang1, and Wei Feng1

1School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Tianjin University, Tianjin 300072, People’s Republic of China
2School of Electrical and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, People’s Republic of China

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(Received 16 October 2009; accepted 4 February 2010; published online 1 March 2010)

A solution-processed bulk heterojuction photovoltaic cell was fabricated based on poly[(2-methoxy,5-octoxy)-1,4-phenylenevinylene](MOPPV)-multiwalled carbon nanotubes (MWNT)/spherical PbSe quantum dots bilayer. Surface morphology shows the interpenetrating network of well-dispersed MWNT in MOPPV matrix. Blueshifted band in absorption and photoluminescence spectra indicate the strong electron interaction between MWNT and MOPPV. A marked twofold increase in short-circuit current (1.71 mA/cm2) and power-conversion efficiency (0.40%) of ITO/MOPPV-MWNT:phenyl-C61-butyric acid methyl ester (PCBM)/PbSe/Al devices was achieved compared with that without MWNT. Results indicate that the enhanced performance was contributed by high photocurrent due to efficient exciton dissociation, charge transfer, and mobility in MWNT pathway.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium, carbon nanotubes, carrier mobility, charge exchange, dissociation, excitons, indium compounds, IV-VI semiconductors, lead compounds, organic compounds, photoconductivity, photoemission, photoluminescence, photovoltaic cells, semiconductor heterojunctions, semiconductor quantum dots, spectral line shift, surface morphology

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3337100

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
XRD pattern of PbSe nanocrystals. Inset: TEM image of PbSe QDs.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) Low and (b) high-resolution SEM images of MOPPV-MWNT film. Inset: TEM image of individual MOPPV-MWNT.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
UV-vis-NIR absorption spectra of PbSe QDs (triangles), MOPPV (circles), and MOPPV-MWNT (squares) in chloroform. Inset: Normalized PL spectra of MOPPV (squares) and MOPPV-MWNT (circles) film excited at 350 nm.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
Current-voltage characteristics of OPV with active layer of MOPPV-MWNT:PCBM/PbSe (circles) and MOPPV:PCBM/PbSe (squares) under dark (hollow) and white light illuminations (solid) of 60 mW/cm2. Inset: Schematic structure of bulk-heterojunction OPV.

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FIG.5
Energy level diagram adjusted in relation to the vacuum level for ITO/MOPPV-MWNT:PCBM/PbSe/Al OPV. Arrows indicate the electron and hole transport.

FIG.5 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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