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Applied Physics Letters / Volume 96 / Issue 9 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 96, 093302 (2010); http://dx.doi.org/10.1063/1.3327833 (3 pages)

High response deep ultraviolet organic photodetector with spectrum peak focused on 280 nm

Shuang-hong Wu1, Wen-lian Li1, Bei Chu1, C S Lee2, Zi-sheng Su1, Jun-bo Wang1, Fei Yan1, Guang Zhang1, Zhi-zhi Hu3, and Zhi-qiang Zhang3

1Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, Changchun 130033, People’s Republic of China and Graduate School of Chinese Academy of Sciences, Beijing 100039, People’s Republic of China
2Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong
3School of Chemical Engineering, University of Science and Technology Liaoning, Anshan 114051, People’s Republic of China

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(Received 23 December 2009; accepted 25 January 2010; published online 1 March 2010)

A high response organic deep ultraviolet (DUV) photodetector (PD) with 280 nm as the response spectrum peak was demonstrated. A maximum photoresponse of 309 mA/W under 280 nm UV illumination with an intensity of 0.428 mW/cm2 and a detectivity of 1×1012 cmHz1/2/W at −8 V were achieved, respectively. The optimized PD diode has a structure of ITO/m-MTDATA (10 nm)/m-MTDATA:Bphen(1:1, 60 nm)/Bphen (10 nm)/Cs2CO3: Bphen (30 wt %,10 nm)/Al(12 nm)/TPD(40 nm). Under 280 nm constant and shuttered illumination conditions with an intensity of 0.18 mW/cm2 the operational time is longer than 440 min when its response respectively decreases to 50% and 83% of its original value. The realization of the DUV detection is attributed to the stronger absorption of shorter UV wavelengths of Bphen acceptor and covering UV waveband longer than 300 nm by the TPD layer. The more detailed mechanism of harvesting the high PD performance is also discussed.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

diodes, organic compounds, photodetectors

PACS

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3327833

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
Absorption spectra of 30 nm thick neat m-MTDATA, Bphen, and their blend film with 1:1 weight ratio on quartz substrate, respectively.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
Photocurrent response spectra of the PDs (Device-1, Device-2, and Device-3) with different thickness of TPD film. Inset: the transmission spectra of 40 nm thick TPD and 12 nm thick Al film at 200–450 nm.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) Photocurrent and dark current densities vs bias voltage for Device-3 under illumination of 280 nm UV light with an intensity of 0.428 mW/cm2 in logarithm. (b) Photocurrent density vs illumination intensity of 280 nm UV light for Device-3.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.4
The dependences of photocurrents on operating time for the optimized PD diodes under a constant and shuttered illumination of 280 nm UV light with an intensity of 0.18 mW/cm2 at −2 V, respectively.

FIG.4 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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